Please use this identifier to cite or link to this item: https://doi.org/10.1149/2.072204jes
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dc.titleSilicon-carbon source and drain stressors: Carbon profile design by ion implantation
dc.contributor.authorZhou, Q.
dc.contributor.authorKoh, S.-M.
dc.contributor.authorTong, Y.
dc.contributor.authorHenry, T.
dc.contributor.authorErokhin, Y.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:36:18Z
dc.date.available2014-10-07T04:36:18Z
dc.date.issued2012
dc.identifier.citationZhou, Q., Koh, S.-M., Tong, Y., Henry, T., Erokhin, Y., Yeo, Y.-C. (2012). Silicon-carbon source and drain stressors: Carbon profile design by ion implantation. Journal of the Electrochemical Society 159 (4) : H425-H432. ScholarBank@NUS Repository. https://doi.org/10.1149/2.072204jes
dc.identifier.issn00134651
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83022
dc.description.abstractWe investigated Si:C SD stressors having a retrograde carbon profile formed by carbon ion implantation and solid phase epitaxy (SPE). The retrograde carbon profile features a 30-nm-thick buried silicon carbon (Si:C) layer that is spatially decoupled from a 10-nm-thick surface layer with high phosphorus concentration. Retrograde carbon profile can increase the dopant activation rate in the Si:C SD stressors and achieves more than 30% reduction of sheet resistance (R s) when SPE temperature is lower than 800°C. Samples with retrograde carbon profile have a lower R s for a given substitutional carbon concentration compared to the uniform carbon profile samples. Nickel monosilicide (NiSi) formed on Si:C SD with a retrograde carbon profile has a R s which ∼10 lower than that formed on Si:C with uniform C profile. © 2012 The Electrochemical Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1149/2.072204jes
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1149/2.072204jes
dc.description.sourcetitleJournal of the Electrochemical Society
dc.description.volume159
dc.description.issue4
dc.description.pageH425-H432
dc.description.codenJESOA
dc.identifier.isiut000300488300095
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