Please use this identifier to cite or link to this item:
https://doi.org/10.1149/2.072204jes
| DC Field | Value | |
|---|---|---|
| dc.title | Silicon-carbon source and drain stressors: Carbon profile design by ion implantation | |
| dc.contributor.author | Zhou, Q. | |
| dc.contributor.author | Koh, S.-M. | |
| dc.contributor.author | Tong, Y. | |
| dc.contributor.author | Henry, T. | |
| dc.contributor.author | Erokhin, Y. | |
| dc.contributor.author | Yeo, Y.-C. | |
| dc.date.accessioned | 2014-10-07T04:36:18Z | |
| dc.date.available | 2014-10-07T04:36:18Z | |
| dc.date.issued | 2012 | |
| dc.identifier.citation | Zhou, Q., Koh, S.-M., Tong, Y., Henry, T., Erokhin, Y., Yeo, Y.-C. (2012). Silicon-carbon source and drain stressors: Carbon profile design by ion implantation. Journal of the Electrochemical Society 159 (4) : H425-H432. ScholarBank@NUS Repository. https://doi.org/10.1149/2.072204jes | |
| dc.identifier.issn | 00134651 | |
| dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/83022 | |
| dc.description.abstract | We investigated Si:C SD stressors having a retrograde carbon profile formed by carbon ion implantation and solid phase epitaxy (SPE). The retrograde carbon profile features a 30-nm-thick buried silicon carbon (Si:C) layer that is spatially decoupled from a 10-nm-thick surface layer with high phosphorus concentration. Retrograde carbon profile can increase the dopant activation rate in the Si:C SD stressors and achieves more than 30% reduction of sheet resistance (R s) when SPE temperature is lower than 800°C. Samples with retrograde carbon profile have a lower R s for a given substitutional carbon concentration compared to the uniform carbon profile samples. Nickel monosilicide (NiSi) formed on Si:C SD with a retrograde carbon profile has a R s which ∼10 lower than that formed on Si:C with uniform C profile. © 2012 The Electrochemical Society. | |
| dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1149/2.072204jes | |
| dc.source | Scopus | |
| dc.type | Article | |
| dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
| dc.description.doi | 10.1149/2.072204jes | |
| dc.description.sourcetitle | Journal of the Electrochemical Society | |
| dc.description.volume | 159 | |
| dc.description.issue | 4 | |
| dc.description.page | H425-H432 | |
| dc.description.coden | JESOA | |
| dc.identifier.isiut | 000300488300095 | |
| Appears in Collections: | Staff Publications | |
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