Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3645018
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dc.titleSchottky barrier height tuning of silicides on p-type Si (100) by aluminum implantation and pulsed excimer laser anneal
dc.contributor.authorKoh, S.-M.
dc.contributor.authorWang, X.
dc.contributor.authorThanigaivelan, T.
dc.contributor.authorHenry, T.
dc.contributor.authorErokhin, Y.
dc.contributor.authorSamudra, G.S.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:36:02Z
dc.date.available2014-10-07T04:36:02Z
dc.date.issued2011-10-01
dc.identifier.citationKoh, S.-M., Wang, X., Thanigaivelan, T., Henry, T., Erokhin, Y., Samudra, G.S., Yeo, Y.-C. (2011-10-01). Schottky barrier height tuning of silicides on p-type Si (100) by aluminum implantation and pulsed excimer laser anneal. Journal of Applied Physics 110 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3645018
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82999
dc.description.abstractWe investigate the tuning of Schottky barrier height (SBH) of nickel silicide formed by pulsed excimer laser anneal of nickel on silicon implanted with aluminum (Al). A wide range of laser fluence was investigated, and it has been found that laser fluence influences the distribution of Al within the silicide and at the silicide/silicon interface. This in turn affects the effective whole SBH (φB p) at the silicide/silicon junction. High Al concentration at the silicide/silicon interface and high temperature for nano-second duration to achieve Al activation while keeping the Al concentration within the silicide low is vital for achieving low φB p. We demonstrate the achievement of one of the lowest reported φB p of ∼0.11 eV. This introduces a new option for forming nickel silicide contacts with reduced contact resistance at low thermal budget for possible adoption in future metal-oxide-semiconductor transistor technologies. © 2011 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.3645018
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.3645018
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume110
dc.description.issue7
dc.description.page-
dc.description.codenJAPIA
dc.identifier.isiut000295883000051
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