Schottky barrier height modulation of nickeldysprosium-alloy germanosilicide contacts for strained P-FinFETs

Abstract

This letter reports on the fabrication and hole Schottky barrier Φp p modulation of a novel nickel (Ni)dysprosium (Dy)-alloy germanosilicide (NiDySiGe) on silicongermanium (SiGe). Aluminum (Al) implant is utilized to lower the Φp p of NiDySiGe from ̃0.5 to ̃0.12 eV, with a correspondingly increasing Al dose in the range of 0-2 × 1015 atoms/cm2. When integrated as the contact silicide in p-FinFETs (with SiGe source/drain), NiDySiGe with an Al implant dose of 2 × 1014 atoms cm2 leads to 32% enhancement in IDSAT over p-FinFETs with conventional NiSiGe contacts. NiDy-alloy silicide is a promising single silicide solution for series-resistance reduction in CMOS FinFETs. © 2009 IEEE.