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Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2009.2034111
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dc.titleSchottky barrier height modulation of nickeldysprosium-alloy germanosilicide contacts for strained P-FinFETs
dc.contributor.authorSinha, M.
dc.contributor.authorLee, R.T.P.
dc.contributor.authorChor, E.F.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:36:01Z
dc.date.available2014-10-07T04:36:01Z
dc.date.issued2009-12
dc.identifier.citationSinha, M., Lee, R.T.P., Chor, E.F., Yeo, Y.-C. (2009-12). Schottky barrier height modulation of nickeldysprosium-alloy germanosilicide contacts for strained P-FinFETs. IEEE Electron Device Letters 30 (12) : 1278-1280. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2009.2034111
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82998
dc.description.abstractThis letter reports on the fabrication and hole Schottky barrier Φp p modulation of a novel nickel (Ni)dysprosium (Dy)-alloy germanosilicide (NiDySiGe) on silicongermanium (SiGe). Aluminum (Al) implant is utilized to lower the Φp p of NiDySiGe from ̃0.5 to ̃0.12 eV, with a correspondingly increasing Al dose in the range of 0-2 × 1015 atoms/cm2. When integrated as the contact silicide in p-FinFETs (with SiGe source/drain), NiDySiGe with an Al implant dose of 2 × 1014 atoms cm2 leads to 32% enhancement in IDSAT over p-FinFETs with conventional NiSiGe contacts. NiDy-alloy silicide is a promising single silicide solution for series-resistance reduction in CMOS FinFETs. © 2009 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2009.2034111
dc.sourceScopus
dc.subjectAluminum implant
dc.subjectContact resistance
dc.subjectFinFETs
dc.subjectNickel (Ni)-dysprosium (Dy)-alloy germanosilicide (NiDySiGe)
dc.subjectSchottky barrier height
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2009.2034111
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume30
dc.description.issue12
dc.description.page1278-1280
dc.description.codenEDLED
dc.identifier.isiut000272044500010
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