Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2006.882567
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dc.titleReduction of leakage and low-frequency noise in MOS transistors through two-step RTA of NiSi-Silicide technology
dc.contributor.authorYang, R.
dc.contributor.authorLoh, W.Y.
dc.contributor.authorYu, M.B.
dc.contributor.authorXiong, Y-.Z.
dc.contributor.authorChoy, S.F.
dc.contributor.authorJiang, Y.
dc.contributor.authorChan, D.S.H.
dc.contributor.authorLim, Y.F.
dc.contributor.authorBera, L.K.
dc.contributor.authorWong, L.Y.
dc.contributor.authorLi, W.H.
dc.contributor.authorDu, A.Y.
dc.contributor.authorTung, C.H.
dc.contributor.authorHoe, K.M.
dc.contributor.authorLo, G.Q.
dc.contributor.authorBalasubramanian, N.
dc.contributor.authorKwong, D.-L.
dc.date.accessioned2014-10-07T04:35:42Z
dc.date.available2014-10-07T04:35:42Z
dc.date.issued2006
dc.identifier.citationYang, R., Loh, W.Y., Yu, M.B., Xiong, Y-.Z., Choy, S.F., Jiang, Y., Chan, D.S.H., Lim, Y.F., Bera, L.K., Wong, L.Y., Li, W.H., Du, A.Y., Tung, C.H., Hoe, K.M., Lo, G.Q., Balasubramanian, N., Kwong, D.-L. (2006). Reduction of leakage and low-frequency noise in MOS transistors through two-step RTA of NiSi-Silicide technology. IEEE Electron Device Letters 27 (10) : 824-826. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2006.882567
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82971
dc.description.abstractA two-step rapid thermal annealing (RTA) nickel salicidation process was employed to fabricate 0.1-mum gate length CMOS transistors. Excess salicidation, common in the conventional one-step RTA NiSi process, is effectively suppressed by this approach, which is confirmed by transmission electron microscopy (TEM) images. More improvements due to two-step NiSi are observed in NMOS than in PMOS transistors: The n+-p junction diode with two-step NiSi exhibits lower reverse leakage and higher breakdown voltage than the one-step silicided diode. For the first time, it is found that two-step NiSi NMOS exhibits significant reduction in off-state leakage (∼5×) and low-frequency noise (up to two orders of magnitude) over one-step NiSi NMOS, although there is not much difference in PMOS transistors.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2006.882567
dc.sourceScopus
dc.subjectBreakdown voltage
dc.subjectCMOS
dc.subjectDiode
dc.subjectLeakage
dc.subjectLow-frequency noise
dc.subjectNiSi salicidation
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2006.882567
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume27
dc.description.issue10
dc.description.page824-826
dc.description.codenEDLED
dc.identifier.isiut000240925900011
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