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Title: Raman scattering of Ge/Si dot superlattices under hydrostatic pressure
Authors: Qin, L.
Teo, K.L. 
Shen, Z.X. 
Peng, C.S.
Zhou, J.M.
Issue Date: 15-Aug-2001
Citation: Qin, L.,Teo, K.L.,Shen, Z.X.,Peng, C.S.,Zhou, J.M. (2001-08-15). Raman scattering of Ge/Si dot superlattices under hydrostatic pressure. Physical Review B - Condensed Matter and Materials Physics 64 (7) : 753121-753125. ScholarBank@NUS Repository.
Abstract: We have studied the self-organized Ge/Si quantum dots (QD's) by Raman scattering under hydrostatic pressure near resonance and off resonance with confined Ge-like E1 transition. The Raman spectra of Ge-Ge, Si-Ge, and the Si acoustic phonon (Si-2TA) modes were obtained as function of pressures in the range 1-70 kbar. Our results show that the Ge-Ge and Si-2TA modes can be easily resolved at low pressure due to a high degree of compressive built-in strain in the Ge layers. The mode Grüneisen parameter of the Ge-Ge phonon mode in QD's is found to be γ=0.81±0.01, which is smaller than the corresponding quantity in bulk Ge. Normalized Raman intensity profiles of Ge-Ge mode exhibit a resonance enhancement peak at ∼32 kbar. The pressure coefficient a of this resonating electronic transition thus obtained is ∼5±1 meV/kbar. This value is smaller than the pressure shift of the E1 transition in bulk Ge.
Source Title: Physical Review B - Condensed Matter and Materials Physics
ISSN: 01631829
Appears in Collections:Staff Publications

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