Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.mseb.2003.09.037
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dc.titleRaman and photoluminescence properties of Ge nanocrystals in silicon oxide matrix
dc.contributor.authorJie, Y.X.
dc.contributor.authorWee, A.T.S.
dc.contributor.authorHuan, C.H.A.
dc.contributor.authorSun, W.X.
dc.contributor.authorShen, Z.X.
dc.contributor.authorChua, S.J.
dc.date.accessioned2014-10-07T04:35:31Z
dc.date.available2014-10-07T04:35:31Z
dc.date.issued2004-02-25
dc.identifier.citationJie, Y.X., Wee, A.T.S., Huan, C.H.A., Sun, W.X., Shen, Z.X., Chua, S.J. (2004-02-25). Raman and photoluminescence properties of Ge nanocrystals in silicon oxide matrix. Materials Science and Engineering B: Solid-State Materials for Advanced Technology 107 (1) : 8-13. ScholarBank@NUS Repository. https://doi.org/10.1016/j.mseb.2003.09.037
dc.identifier.issn09215107
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82957
dc.description.abstractGe nanocrystals (nc-Ge) embedded in silicon oxide thin films have been fabricated using rf magnetron co-sputtering deposition and post-growth thermal annealing method. Raman scattering and photoluminscence (PL) measurements have been used to characterize their crystallization and light emission properties. The Ge crystallinity and nanocrystal size obtained using a three-peak fitting method based on a phonon confinement model have been found to increase with the increase of annealing temperature. The observed blue photoluminescence band located at ∼3.1eV and a weaker band at ∼2.4eV under the excitation of 325nm laser did not show significant size dependence while their relative intensities were related to the addition of H2 or O2 into the sputtering ambient. The photoluminescence mechanism is discussed. © 2003 Elsevier B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.mseb.2003.09.037
dc.sourceScopus
dc.subjectGermanium
dc.subjectNanocrystals
dc.subjectPhotoluminescence
dc.subjectRaman scattering
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1016/j.mseb.2003.09.037
dc.description.sourcetitleMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
dc.description.volume107
dc.description.issue1
dc.description.page8-13
dc.description.codenMSBTE
dc.identifier.isiut000220291100002
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