Please use this identifier to cite or link to this item: https://doi.org/10.1186/1556-276X-7-114
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dc.titleQuantum transport simulations of graphene nanoribbon devices using dirac equation calibrated with tight-binding π-bond model
dc.contributor.authorChin, S.-K.
dc.contributor.authorLam, K.-T.
dc.contributor.authorSeah, D.
dc.contributor.authorLiang, G.
dc.date.accessioned2014-10-07T04:35:28Z
dc.date.available2014-10-07T04:35:28Z
dc.date.issued2012
dc.identifier.citationChin, S.-K., Lam, K.-T., Seah, D., Liang, G. (2012). Quantum transport simulations of graphene nanoribbon devices using dirac equation calibrated with tight-binding π-bond model. Nanoscale Research Letters 7 : -. ScholarBank@NUS Repository. https://doi.org/10.1186/1556-276X-7-114
dc.identifier.issn19317573
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82953
dc.description.abstractWe present an efficient approach to study the carrier transport in graphene nanoribbon (GNR) devices using the non-equilibrium Green's function approach (NEGF) based on the Dirac equation calibrated to the tight-binding π-bond model for graphene. The approach has the advantage of the computational efficiency of the Dirac equation and still captures sufficient quantitative details of the bandstructure from the tight-binding π-bond model for graphene. We demonstrate how the exact self-energies due to the leads can be calculated in the NEGF-Dirac model. We apply our approach to GNR systems of different widths subjecting to different potential profiles to characterize their device physics. Specifically, the validity and accuracy of our approach will be demonstrated by benchmarking the density of states and transmissions characteristics with that of the more expensive transport calculations for the tight-binding π-bond model. © 2012 Chin et al.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1186/1556-276X-7-114
dc.sourceScopus
dc.subjectDirac equation
dc.subjectGraphene nanoribbons
dc.subjectNon-equilibrium green's function
dc.subjectQuantum transport
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1186/1556-276X-7-114
dc.description.sourcetitleNanoscale Research Letters
dc.description.volume7
dc.description.page-
dc.identifier.isiut000305237500001
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