Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/82947
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dc.titlePulsed laser deposition of TiNi thin films at various temperatures
dc.contributor.authorLu, Y.-F.
dc.contributor.authorChen, X.-Y.
dc.contributor.authorRen, Z.-M.
dc.contributor.authorZhu, S.
dc.contributor.authorWang, J.-P.
dc.contributor.authorLiew, T.Y.F.
dc.date.accessioned2014-10-07T04:35:24Z
dc.date.available2014-10-07T04:35:24Z
dc.date.issued2001-09
dc.identifier.citationLu, Y.-F.,Chen, X.-Y.,Ren, Z.-M.,Zhu, S.,Wang, J.-P.,Liew, T.Y.F. (2001-09). Pulsed laser deposition of TiNi thin films at various temperatures. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 40 (9 A) : 5329-5333. ScholarBank@NUS Repository.
dc.identifier.issn00214922
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82947
dc.description.abstractThin films of TiNi shape memory alloy (SMA) have been prepared by pulsed-laser deposition (PLD) at various substrate temperatures. X-ray photoelectron spectroscopy (XPS), surface profile measurements, and X-ray diffraction (XRD) are used to characterize the deposited films. The stoichiometry, deposition rate, and crystallinity of the films are investigated as functions of the substrate temperature. The deposition rates are of the order of 10-2 nm per pulse. The Ni content ranges from 46.7 to 52.0 at.%. It is found that the film deposited at a substrate temperature of 600°C has a polycrystalline structure and austenite is the major phase. It can be concluded that substrate temperature plays an important role in the composition control and the crystallization of the films. The martensitic transformation temperature of the annealed Ti-51.5 at.% Ni thin film is determined to be -20.8°C by differential scanning calorimetry (DSC).
dc.sourceScopus
dc.subjectCrystallography
dc.subjectLaser ablation
dc.subjectMicrostructure
dc.subjectShape memory alloy
dc.subjectThin film
dc.subjectTiNi
dc.typeArticle
dc.contributor.departmentDATA STORAGE INSTITUTE
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitleJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
dc.description.volume40
dc.description.issue9 A
dc.description.page5329-5333
dc.description.codenJAPND
dc.identifier.isiutNOT_IN_WOS
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