Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.1473192
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dc.titlePhase and layer stability of Ni- and Ni(Pt)-silicides on narrow poly-Si lines
dc.contributor.authorLee, P.S.
dc.contributor.authorPey, K.L.
dc.contributor.authorMangelinck, D.
dc.contributor.authorDing, J.
dc.contributor.authorChi, D.Z.
dc.contributor.authorDai, J.Y.
dc.contributor.authorChan, L.
dc.date.accessioned2014-10-07T04:34:37Z
dc.date.available2014-10-07T04:34:37Z
dc.date.issued2002-06
dc.identifier.citationLee, P.S., Pey, K.L., Mangelinck, D., Ding, J., Chi, D.Z., Dai, J.Y., Chan, L. (2002-06). Phase and layer stability of Ni- and Ni(Pt)-silicides on narrow poly-Si lines. Journal of the Electrochemical Society 149 (6) : G331-G335. ScholarBank@NUS Repository. https://doi.org/10.1149/1.1473192
dc.identifier.issn00134651
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82883
dc.description.abstractThe phase and morphology stability of NiSi and Ni(Pt)Si formed on the poly-Si lines and wide pads have been studied. Differences in the NiSi2 nucleation temperature and the extent of layer inversion have been analyzed. The nucleation of NiSi2 was hindered on the narrow poly-Si lines as compared to that on the large area poly-Si pads at 750°C. Stress is believed to play an important role in the delayed nucleation of NiSi2. In addition, layer inversion was found to be less severe on the narrow poly-Si lines as compared to that on the poly-Si pads after being subjected to the same annealing condition. This is likely due to the limiting grain growth of the poly-Si in the narrow lines. Enhanced stability of Ni(Pt)Si was achieved up to 800°C on both poly-Si wide pads and narrow lines.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1149/1.1473192
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentMATERIALS SCIENCE
dc.description.doi10.1149/1.1473192
dc.description.sourcetitleJournal of the Electrochemical Society
dc.description.volume149
dc.description.issue6
dc.description.pageG331-G335
dc.description.codenJESOA
dc.identifier.isiut000175564700052
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