Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.3126496
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dc.titlePalladium-induced lateral crystallization of amorphous-germanium thin film on insulating substrate
dc.contributor.authorXie, R.
dc.contributor.authorPhung, T.H.
dc.contributor.authorYu, M.
dc.contributor.authorOh, S.A.
dc.contributor.authorTripathy, S.
dc.contributor.authorZhu, C.
dc.date.accessioned2014-10-07T04:34:22Z
dc.date.available2014-10-07T04:34:22Z
dc.date.issued2009
dc.identifier.citationXie, R., Phung, T.H., Yu, M., Oh, S.A., Tripathy, S., Zhu, C. (2009). Palladium-induced lateral crystallization of amorphous-germanium thin film on insulating substrate. Electrochemical and Solid-State Letters 12 (7) : H266-H268. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3126496
dc.identifier.issn10990062
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82861
dc.description.abstractIn this article, metal (palladium, Pd)-induced lateral crystallization (MILC) of amorphous-germanium (α-Ge) films prepared by room-temperature sputtering on an insulating material (SiO2) is observed and investigated using micro-Raman microscopy and transmission electron microscopy. The planar α-Ge thin films were annealed at 300, 350, and 400°C in a N2 ambient. The MILC phenomenon is not observed for the samples annealed at 300°C for 2 h, while the MILC phenomenon is observed for α-Ge films annealed at 350 and 400°C for 2 h with a lateral growth rate of ∼1.1 and 1.3 μm/h, respectively. A poly-Ge film with a 400°C annealing temperature exhibits a smaller full width at half-maximum and a higher intensity of the sharp c-Ge peak than that annealed at 350°C, which can be the promising material candidate for Si-based three-dimensional integrated circuit applications. © 2009 The Electrochemical Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1149/1.3126496
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1149/1.3126496
dc.description.sourcetitleElectrochemical and Solid-State Letters
dc.description.volume12
dc.description.issue7
dc.description.pageH266-H268
dc.description.codenESLEF
dc.identifier.isiut000266207100027
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