Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1330252
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dc.titleOxidation study of plasma-enhanced chemical vapor deposited and rf sputtered hydrogenated amorphous silicon carbide films
dc.contributor.authorChoi, W.K.
dc.contributor.authorLee, L.P.
dc.contributor.authorFoo, S.L.
dc.contributor.authorGangadharan, S.
dc.contributor.authorChong, N.B.
dc.contributor.authorTan, L.S.
dc.date.accessioned2014-10-07T04:34:18Z
dc.date.available2014-10-07T04:34:18Z
dc.date.issued2001-02-01
dc.identifier.citationChoi, W.K., Lee, L.P., Foo, S.L., Gangadharan, S., Chong, N.B., Tan, L.S. (2001-02-01). Oxidation study of plasma-enhanced chemical vapor deposited and rf sputtered hydrogenated amorphous silicon carbide films. Journal of Applied Physics 89 (3) : 1942-1947. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1330252
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82856
dc.description.abstractAn oxidation study of plasma-enhanced chemical vapor deposited (PECVD) and rf sputtered hydrogenated amorphous silicon carbide (a-Si1-xCx:H) films was carried out using the infrared (IR) and electron spin resonance (ESR) techniques. a-Si1-xCx:H films with x = 0.3, 0.5, and 0.8 were prepared with the PECVD method and significant oxide growth can only be obtained in a-Si0.2C0.8:H film. IR results showed that Si-CH3 bonds provide the necessary porous structure for oxide growth. The oxide quality was found to be poor when compared to oxide obtained from pure silicon. Annealing in nitrogen enhances the porosity of the PECVD films and results in faster oxide growth. For sputtered films, oxide growth can only be observed in film containing Si-CH3 bonds. We are not able to separate the contributions of the Si-H, Si-C, Si-CH3, and the Si dangling bonds to the oxide growth for the PECVD and rf sputtered films. © 2001 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1330252
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.1330252
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume89
dc.description.issue3
dc.description.page1942-1947
dc.description.codenJAPIA
dc.identifier.isiut000166644400064
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