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Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1645639
DC FieldValue
dc.titleOrigin of charge trapping in germanium nanocrystal embedded SiO 2 system: Role of interfacial traps?
dc.contributor.authorKan, E.W.H.
dc.contributor.authorChoi, W.K.
dc.contributor.authorChim, W.K.
dc.contributor.authorFitzgerald, E.A.
dc.contributor.authorAntoniadis, D.A.
dc.date.accessioned2014-10-07T04:34:15Z
dc.date.available2014-10-07T04:34:15Z
dc.date.issued2004-03-15
dc.identifier.citationKan, E.W.H., Choi, W.K., Chim, W.K., Fitzgerald, E.A., Antoniadis, D.A. (2004-03-15). Origin of charge trapping in germanium nanocrystal embedded SiO 2 system: Role of interfacial traps?. Journal of Applied Physics 95 (6) : 3148-3152. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1645639
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82851
dc.description.abstractThe thermal oxidations of polycrystalline Si 0.54Ge 0.46 films at 600°C for 30 and 50 min were discussed. It was found that a stable mixed oxide was obtained for films that were oxidized for 50 min. The fabrication of a trilayer gate structure that consisted of tunnel oxide/oxidized polycrystalline Si 0.54Ge 0.46/rf was studied. It was observed that the charge storage mechanism for the trilayer structure was closely related to the interfacial traps of the nanocrystals.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1645639
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.1645639
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume95
dc.description.issue6
dc.description.page3148-3152
dc.description.codenJAPIA
dc.identifier.isiut000189384700031
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