Please use this identifier to cite or link to this item: https://doi.org/10.1088/0960-1317/22/5/055012
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dc.titleOptimization of NEMS pressure sensors with a multilayered diaphragm using silicon nanowires as piezoresistive sensing elements
dc.contributor.authorLou, L.
dc.contributor.authorZhang, S.
dc.contributor.authorPark, W.-T.
dc.contributor.authorTsai, J.M.
dc.contributor.authorKwong, D.-L.
dc.contributor.authorLee, C.
dc.date.accessioned2014-10-07T04:34:11Z
dc.date.available2014-10-07T04:34:11Z
dc.date.issued2012-05
dc.identifier.citationLou, L., Zhang, S., Park, W.-T., Tsai, J.M., Kwong, D.-L., Lee, C. (2012-05). Optimization of NEMS pressure sensors with a multilayered diaphragm using silicon nanowires as piezoresistive sensing elements. Journal of Micromechanics and Microengineering 22 (5) : -. ScholarBank@NUS Repository. https://doi.org/10.1088/0960-1317/22/5/055012
dc.identifier.issn09601317
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82845
dc.description.abstractA pressure sensor with a 200 μm diaphragm using silicon nanowires (SiNWs) as a piezoresistive sensing element is developed and optimized. The SiNWs are embedded in a multilayered diaphragm structure comprising silicon nitride (SiN x) and silicon oxide (SiO 2). Optimizations were performed on both SiNWs and the diaphragm structure. The diaphragm with a 1.2 μm SiN x layer is considered to be an optimized design in terms of small initial central deflection (0.1 μm), relatively high sensitivity (0.6% psi 1) and good linearity within our measurement range. © 2012 IOP Publishing Ltd.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1088/0960-1317/22/5/055012
dc.description.sourcetitleJournal of Micromechanics and Microengineering
dc.description.volume22
dc.description.issue5
dc.description.page-
dc.description.codenJMMIE
dc.identifier.isiut000303197000012
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