Please use this identifier to cite or link to this item:
https://doi.org/10.1063/1.3504653
DC Field | Value | |
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dc.title | On the nuclear magnetic resonance frequency of phosphorus donor atom in a silicon-based quantum computer | |
dc.contributor.author | Mirzaei, H. | |
dc.contributor.author | Hui, H.T. | |
dc.date.accessioned | 2014-10-07T04:33:50Z | |
dc.date.available | 2014-10-07T04:33:50Z | |
dc.date.issued | 2010-11-01 | |
dc.identifier.citation | Mirzaei, H., Hui, H.T. (2010-11-01). On the nuclear magnetic resonance frequency of phosphorus donor atom in a silicon-based quantum computer. Journal of Applied Physics 108 (9) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3504653 | |
dc.identifier.issn | 00218979 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/82816 | |
dc.description.abstract | The nuclear magnetic resonance (NMR) frequency of a single qubit structure of Kane's solid-state quantum computer is investigated by using the perturbation theory. With higher-order excited states (up to 3d modes) included in our calculation, the perturbation frequencies and energies are obtained numerically. To compute for arbitrary A gate geometries, the perturbation potential inside the qubit structure is determined through an electromagnetic simulation method. Calculations show that the potential distributions for realistic A gate geometries are far from linear ones. Our results show that the A gate voltage has a much more effective control over the NMR frequency of the phosphorus nucleus than that previously shown. Using our method, arbitrary A gate structures of any shapes or geometries can be engineered for the realization of a solid-state scalable quantum computer. We also investigate an alternative A gate structure using SiGe as the insulation barrier. Our study shows that this A gate structure offers a much more efficient utilization of the control voltage than the original A gate structure using SiO2 as the insulation barrier. © 2010 American Institute of Physics. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.3504653 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1063/1.3504653 | |
dc.description.sourcetitle | Journal of Applied Physics | |
dc.description.volume | 108 | |
dc.description.issue | 9 | |
dc.description.page | - | |
dc.description.coden | JAPIA | |
dc.identifier.isiut | 000284270900148 | |
Appears in Collections: | Staff Publications |
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