Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3504653
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dc.titleOn the nuclear magnetic resonance frequency of phosphorus donor atom in a silicon-based quantum computer
dc.contributor.authorMirzaei, H.
dc.contributor.authorHui, H.T.
dc.date.accessioned2014-10-07T04:33:50Z
dc.date.available2014-10-07T04:33:50Z
dc.date.issued2010-11-01
dc.identifier.citationMirzaei, H., Hui, H.T. (2010-11-01). On the nuclear magnetic resonance frequency of phosphorus donor atom in a silicon-based quantum computer. Journal of Applied Physics 108 (9) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3504653
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82816
dc.description.abstractThe nuclear magnetic resonance (NMR) frequency of a single qubit structure of Kane's solid-state quantum computer is investigated by using the perturbation theory. With higher-order excited states (up to 3d modes) included in our calculation, the perturbation frequencies and energies are obtained numerically. To compute for arbitrary A gate geometries, the perturbation potential inside the qubit structure is determined through an electromagnetic simulation method. Calculations show that the potential distributions for realistic A gate geometries are far from linear ones. Our results show that the A gate voltage has a much more effective control over the NMR frequency of the phosphorus nucleus than that previously shown. Using our method, arbitrary A gate structures of any shapes or geometries can be engineered for the realization of a solid-state scalable quantum computer. We also investigate an alternative A gate structure using SiGe as the insulation barrier. Our study shows that this A gate structure offers a much more efficient utilization of the control voltage than the original A gate structure using SiO2 as the insulation barrier. © 2010 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.3504653
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.3504653
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume108
dc.description.issue9
dc.description.page-
dc.description.codenJAPIA
dc.identifier.isiut000284270900148
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