Please use this identifier to cite or link to this item:
https://doi.org/10.1109/TED.2008.927391
DC Field | Value | |
---|---|---|
dc.title | Novel rare-earth dielectric interlayers for wide NMOS work-function tunability in Ni-FUSI gates | |
dc.contributor.author | Lim, A.E.-J. | |
dc.contributor.author | Lee, R.T.P. | |
dc.contributor.author | Samudra, G.S. | |
dc.contributor.author | Kwong, D.-L. | |
dc.contributor.author | Yeo, Y.-C. | |
dc.date.accessioned | 2014-10-07T04:33:31Z | |
dc.date.available | 2014-10-07T04:33:31Z | |
dc.date.issued | 2008 | |
dc.identifier.citation | Lim, A.E.-J., Lee, R.T.P., Samudra, G.S., Kwong, D.-L., Yeo, Y.-C. (2008). Novel rare-earth dielectric interlayers for wide NMOS work-function tunability in Ni-FUSI gates. IEEE Transactions on Electron Devices 55 (9) : 2370-2377. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2008.927391 | |
dc.identifier.issn | 00189383 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/82788 | |
dc.description.abstract | A novel method of forming rare-Earth (RE)-based interlayers to engineer the work function (φm) of nickel fully silicided (Ni-FUSI) gates was investigated. An extensive range of RE metals comprising yttrium (Y), erbium (Er), dysprosium (Dy), terbium (Tb), gadolinium (Gd), ytterbium (Yb), or lanthanum (La) were sputtered to form RE-based interlayers (REIL's) on SiO2 dielectric. The interposed REIL enabled Si conduction band-edge (Ec) modulation (∼3.8-4.0 eV) of midgap NiSi φm. Band edge φm was retained even after a high-temperature annealing was conducted before FUSI. Ni-FUSI gate φm was tunable to ∼4.11-4.39 and ∼4.25-4.48 eV by reducing the interlayer thickness and varying the Ni silicide phase, respectively. Improved gate leakage and breakdown voltage were observed for the REIL-incorporated gate stacks. RE-O-Si bonding confirmed that the REIL's that were formed on SiO2 were thin RE silicates. The modulation of Ni-FUSI gate φm was attributed to the presence of interfacial RE-oxygen (RE-O) dipoles and correlated well with the calculated RE-O dipole magnitude. The application of La-based interlayer LaIL in a HfO2 dielectric stack was also investigated, and band-edge NiSi φm could be engineered by intentionally inserting the LaIL at the HfO2/SiO2 interface. © 2008 IEEE. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/TED.2008.927391 | |
dc.source | Scopus | |
dc.subject | Fully silicided (FUSI) | |
dc.subject | Interlayer | |
dc.subject | Metal gate | |
dc.subject | NiSi | |
dc.subject | Rare-Earth (RE) | |
dc.subject | Silicate | |
dc.subject | Work function engineering | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1109/TED.2008.927391 | |
dc.description.sourcetitle | IEEE Transactions on Electron Devices | |
dc.description.volume | 55 | |
dc.description.issue | 9 | |
dc.description.page | 2370-2377 | |
dc.description.coden | IETDA | |
dc.identifier.isiut | 000258914000011 | |
Appears in Collections: | Staff Publications |
Show simple item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.