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|Title:||Nonvolatile resistive switching memory based on amorphous carbon||Authors:||Zhuge, F.
|Issue Date:||19-Apr-2010||Citation:||Zhuge, F., Dai, W., He, C.L., Wang, A.Y., Liu, Y.W., Li, M., Wu, Y.H., Cui, P., Li, R.-W. (2010-04-19). Nonvolatile resistive switching memory based on amorphous carbon. Applied Physics Letters 96 (16) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3406121||Abstract:||Resistive memory effect has been found in carbon nanostructure-based devices by Standley [Nano Lett. 8, 3345 (2008)]. Compared to nanostructures, hydrogenated amorphous carbon (a-C:H) has much more controllable preparation processes. Study on a-C:H -based memory is of great significance to applications of carbon-based electronic devices. We observed nonvolatile resistance memory behaviors in metal/ a-C:H/Pt structures with device yield 90%, ON/OFF ratio >100, and retention time > 105 s. Detailed analysis indicates that the resistive switching originates from the formation/rupture of metal filaments due to the diffusion of the top electrodes under a bias voltage. © 2010 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/82780||ISSN:||00036951||DOI:||10.1063/1.3406121|
|Appears in Collections:||Staff Publications|
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