Nonvolatile resistive switching memory based on amorphous carbon

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3406121

Title:	Nonvolatile resistive switching memory based on amorphous carbon
Authors:	Zhuge, F. Dai, W. He, C.L. Wang, A.Y. Liu, Y.W. Li, M. Wu, Y.H. Cui, P. Li, R.-W.
Issue Date:	19-Apr-2010
Citation:	Zhuge, F., Dai, W., He, C.L., Wang, A.Y., Liu, Y.W., Li, M., Wu, Y.H., Cui, P., Li, R.-W. (2010-04-19). Nonvolatile resistive switching memory based on amorphous carbon. Applied Physics Letters 96 (16) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3406121
Abstract:	Resistive memory effect has been found in carbon nanostructure-based devices by Standley [Nano Lett. 8, 3345 (2008)]. Compared to nanostructures, hydrogenated amorphous carbon (a-C:H) has much more controllable preparation processes. Study on a-C:H -based memory is of great significance to applications of carbon-based electronic devices. We observed nonvolatile resistance memory behaviors in metal/ a-C:H/Pt structures with device yield 90%, ON/OFF ratio >100, and retention time > 105 s. Detailed analysis indicates that the resistive switching originates from the formation/rupture of metal filaments due to the diffusion of the top electrodes under a bias voltage. © 2010 American Institute of Physics.
Source Title:	Applied Physics Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/82780
ISSN:	00036951
DOI:	10.1063/1.3406121
Appears in Collections:	Staff Publications

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