Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2002.807703
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dc.titleMIM capacitors using atomic-layer-deposited high-κ (HfO2)1-x(Al2O3)x dielectrics
dc.contributor.authorHu, H.
dc.contributor.authorZhu, C.
dc.contributor.authorYu, X.
dc.contributor.authorChin, A.
dc.contributor.authorLi, M.F.
dc.contributor.authorCho, B.J.
dc.contributor.authorKwong, D.-L.
dc.contributor.authorFoo, P.D.
dc.contributor.authorYu, M.B.
dc.contributor.authorLiu, X.
dc.contributor.authorWinkler, J.
dc.date.accessioned2014-10-07T04:32:29Z
dc.date.available2014-10-07T04:32:29Z
dc.date.issued2003-02
dc.identifier.citationHu, H., Zhu, C., Yu, X., Chin, A., Li, M.F., Cho, B.J., Kwong, D.-L., Foo, P.D., Yu, M.B., Liu, X., Winkler, J. (2003-02). MIM capacitors using atomic-layer-deposited high-κ (HfO2)1-x(Al2O3)x dielectrics. IEEE Electron Device Letters 24 (2) : 60-62. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2002.807703
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82701
dc.description.abstractThe metal-insulator-metal (MIM) capacitors with (HfO2)1-x(Al2O3)x high-κ dielectric films were investigated for the first time. The results show that both the capacitance density and voltage/temperature coefficients of capacitance (VCC/TCC) values decrease with increasing the mole fraction of Al2O3. It was demonstrated that the (HfO2)1-x(Al2O3)x MIM capacitor with a Al2O3 mole fraction of 0.14 is optimized. It provides a high capacitance density (3.5 fFμm2) and low VCC values (∼ 140ppm/V2) at the same time. In addition, small frequency dependence, low loss tangent, and low leakage current are also obtained. Also, no electrical degradation was observed for (HfO2)1-x(Al2O3)x MIM capacitors after N2 annealing at 400 °C. All these show that the (HfO2)0.86(Al2O3)0.14 MIM capacitor is very suitable for the capacitor applications within the thermal budget of the back end of line process.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2002.807703
dc.sourceScopus
dc.subjectDispersion
dc.subjectHigh-κ
dc.subjectMetal-insulator-metal (MIM) capacitor
dc.subjectThin-film devices
dc.subjectVoltage linearity
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2002.807703
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume24
dc.description.issue2
dc.description.page60-62
dc.description.codenEDLED
dc.identifier.isiut000182516600003
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