Please use this identifier to cite or link to this item: https://doi.org/10.1116/1.2357746
DC FieldValue
dc.titleMetal-insulator-metal capacitors using atomic-layer-deposited Al 2O3/HfO2/Al2O3 sandwiched dielectrics for wireless communications
dc.contributor.authorDing, S.-J.
dc.contributor.authorHuang, Y.-J.
dc.contributor.authorLi, Y.
dc.contributor.authorZhang, D.W.
dc.contributor.authorZhu, C.
dc.contributor.authorLi, M.-F.
dc.date.accessioned2014-10-07T04:32:18Z
dc.date.available2014-10-07T04:32:18Z
dc.date.issued2006
dc.identifier.citationDing, S.-J., Huang, Y.-J., Li, Y., Zhang, D.W., Zhu, C., Li, M.-F. (2006). Metal-insulator-metal capacitors using atomic-layer-deposited Al 2O3/HfO2/Al2O3 sandwiched dielectrics for wireless communications. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 24 (6) : 2518-2522. ScholarBank@NUS Repository. https://doi.org/10.1116/1.2357746
dc.identifier.issn10711023
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82685
dc.description.abstractHigh density metal-insulator-metal (MIM) capacitors are required for radio frequency and analog/mixed-signal integration circuit applications. In this article, high permittivity Al2 O3 Hf O2 Al2 O3 (AHA) dielectrics have been evaluated in comparison with Hf O2 using atomic layer deposition technique for MIM capacitor applications. The results indicate that the AHA dielectrics exhibit electrical performance superior to the Hf O2 dielectric while retaining similar capacitance density. With respect to 2 nm individual Al2 O3 barriers, the MIM capacitor can offer a capacitance density of 2.6 fFμ m2, voltage coefficients of capacitance of 71 ppm V2 and 9 ppmV, a leakage current as low as 3× 10-9 A cm2 at 1 MVcm and 125 °C, an operating voltage of around 3 V for a ten-year lifetime at 125 °C in terms of 50% failure. © 2006 American Vacuum Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1116/1.2357746
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1116/1.2357746
dc.description.sourcetitleJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
dc.description.volume24
dc.description.issue6
dc.description.page2518-2522
dc.description.codenJVTBD
dc.identifier.isiut000243324400005
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

12
checked on Apr 7, 2021

WEB OF SCIENCETM
Citations

11
checked on Apr 7, 2021

Page view(s)

64
checked on Apr 12, 2021

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.