Please use this identifier to cite or link to this item:
https://doi.org/10.1063/1.3647781
DC Field | Value | |
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dc.title | Mega-electron-volt proton irradiation on supported and suspended graphene: A Raman spectroscopic layer dependent study | |
dc.contributor.author | Mathew, S. | |
dc.contributor.author | Chan, T.K. | |
dc.contributor.author | Zhan, D. | |
dc.contributor.author | Gopinadhan, K. | |
dc.contributor.author | Roy Barman, A. | |
dc.contributor.author | Breese, M.B.H. | |
dc.contributor.author | Dhar, S. | |
dc.contributor.author | Shen, Z.X. | |
dc.contributor.author | Venkatesan, T. | |
dc.contributor.author | Thong, J.T.L. | |
dc.date.accessioned | 2014-10-07T04:32:12Z | |
dc.date.available | 2014-10-07T04:32:12Z | |
dc.date.issued | 2011-10-15 | |
dc.identifier.citation | Mathew, S., Chan, T.K., Zhan, D., Gopinadhan, K., Roy Barman, A., Breese, M.B.H., Dhar, S., Shen, Z.X., Venkatesan, T., Thong, J.T.L. (2011-10-15). Mega-electron-volt proton irradiation on supported and suspended graphene: A Raman spectroscopic layer dependent study. Journal of Applied Physics 110 (8) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3647781 | |
dc.identifier.issn | 00218979 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/82677 | |
dc.description.abstract | Graphene samples with 1, 2, and 4 layers and 1 + 1 folded bi-layers and graphite have been irradiated with 2 MeV protons at fluences ranging from 1 × 1015 to 6 × 1018 ions/cm2. The samples were characterized using visible and UV Raman spectroscopy and Raman microscopy. The ion-induced defects were found to decrease with increasing number of layers. Graphene samples suspended over etched holes in SiO 2 have been fabricated and used to investigate the influence of the substrate SiO2 for defect creation in graphene. While Raman vibrational modes at 1460 cm-1 and 1555 cm-1 have been observed in the visible Raman spectra of substantially damaged graphene samples, these modes were absent in the irradiated-suspended monolayer graphene. © 2011 American Institute of Physics. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.3647781 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.contributor.department | PHYSICS | |
dc.description.doi | 10.1063/1.3647781 | |
dc.description.sourcetitle | Journal of Applied Physics | |
dc.description.volume | 110 | |
dc.description.issue | 8 | |
dc.description.page | - | |
dc.description.coden | JAPIA | |
dc.identifier.isiut | 000296519900132 | |
Appears in Collections: | Staff Publications |
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