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Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2005.10.024
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dc.titleMBE growth and properties of Cr-doped ZnTe on GaAs(001)
dc.contributor.authorHou, X.J.
dc.contributor.authorTeo, K.L.
dc.contributor.authorSreenivasan, M.G.
dc.contributor.authorLiew, T.
dc.contributor.authorChong, T.C.
dc.date.accessioned2014-10-07T04:32:08Z
dc.date.available2014-10-07T04:32:08Z
dc.date.issued2006-05-18
dc.identifier.citationHou, X.J., Teo, K.L., Sreenivasan, M.G., Liew, T., Chong, T.C. (2006-05-18). MBE growth and properties of Cr-doped ZnTe on GaAs(001). Thin Solid Films 505 (1-2) : 126-128. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2005.10.024
dc.identifier.issn00406090
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82672
dc.description.abstractCr-doped ZnTe diluted magnetic semiconductor thin films were grown on semi-insulating GaAs [001] substrates at low temperature by solid-source molecular-beam epitaxy. Zn1-xCrxTe samples with Cr concentrations x = 0.026 and x = 0.141 were prepared. The magnetization versus magnetic field (M-H) measurement showed a clear hysteresis loop at low temperature for these samples. For higher Cr doping with nominal Cr concentration of x > 0.18, we obtained a Curie temperature of 365 K; the highest reported so far for thin film sample. However, this strong ferromagnetic momentum could possibly be due to Cr1-δTe precipitate in the Cr-doped ZnTe system. © 2005 Elsevier B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.tsf.2005.10.024
dc.sourceScopus
dc.subjectCurie temperature
dc.subjectDiluted magnetic semiconductor
dc.subjectMBE
dc.subjectZn 1-xCrxTe
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1016/j.tsf.2005.10.024
dc.description.sourcetitleThin Solid Films
dc.description.volume505
dc.description.issue1-2
dc.description.page126-128
dc.description.codenTHSFA
dc.identifier.isiut000236440600028
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