Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2005.10.033
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dc.titleMagnetoresistance of closely packed Ni80Fe20 nanowires
dc.contributor.authorGoolaup, S.
dc.contributor.authorAdeyeye, A.O.
dc.contributor.authorSingh, N.
dc.date.accessioned2014-10-07T04:32:01Z
dc.date.available2014-10-07T04:32:01Z
dc.date.issued2006-05-18
dc.identifier.citationGoolaup, S., Adeyeye, A.O., Singh, N. (2006-05-18). Magnetoresistance of closely packed Ni80Fe20 nanowires. Thin Solid Films 505 (1-2) : 29-34. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2005.10.033
dc.identifier.issn00406090
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82662
dc.description.abstractIn this work, we present a systematic study of the transport properties of Ni80Fe20 nanowire arrays with varied film thicknesses. Closely packed nanowire arrays of width 185 nm and edge to edge of spacing 35 nm were fabricated using deep ultra-violet (DUV) lithography at 248 nm exposing wavelength. Our thickness-dependent study reveals a crossover from coherent rotation to curling mode of magnetization for t ≥ 80 nm. This is attributed to the spatially varying demagnetizing field across the wire. The magnetization reversal for fields applied along the hard-axis is mediated by coherent rotation, for all the thicknesses investigated. We also observed the appearance of exchange bias effect at 4 K, due to the formation of an anti-ferromagnetic phase. © 2005 Elsevier B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.tsf.2005.10.033
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1016/j.tsf.2005.10.033
dc.description.sourcetitleThin Solid Films
dc.description.volume505
dc.description.issue1-2
dc.description.page29-34
dc.description.codenTHSFA
dc.identifier.isiut000236440600006
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