Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1453347
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dc.titleMagnetization reversal analysis for antiferromagnetic-coupled films with magnetic field angle dependence
dc.contributor.authorRen, H.B.
dc.contributor.authorWang, J.P.
dc.contributor.authorNg, V.
dc.date.accessioned2014-10-07T04:31:56Z
dc.date.available2014-10-07T04:31:56Z
dc.date.issued2002-05-15
dc.identifier.citationRen, H.B., Wang, J.P., Ng, V. (2002-05-15). Magnetization reversal analysis for antiferromagnetic-coupled films with magnetic field angle dependence. Journal of Applied Physics 91 (10 I) : 8623-8625. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1453347
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82654
dc.description.abstractIn this article, theoretical analysis for the antiferromagnetically coupled films (two layers system) with magnetic field angle dependence is presented. The nonlinear simulative equations for such medium have been deduced and solved by the graphic solution method. Through the analysis of the solutions of different magnetic parameters (K 1, K 2, M 1, M 2, t 1, t 2, and J) and applied magnetic field angle (θ), the relationship between the magnetic switching fields (h 1n,h 2n) for each layer and the above magnetic parameters have been determined. The hysteresis loop with an applied field angle can be calculated and one example is plotted. By comparing the magnetic switching properties (h 1n,h 2n) with that of single layer (h n), it has been found that for both the top-magnetic layer and bottom-magnetic layer, the difference of the switching field (h 1n-h n) and (h 2n-h n), which are brought by the antiferromagnetical coupling effect (J), are closely correlated with the applied field angle. © 2002 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1453347
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.1453347
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume91
dc.description.issue10 I
dc.description.page8623-8625
dc.description.codenJAPIA
dc.identifier.isiut000175576400265
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