Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2005.10.038
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dc.titleMagnetic and transport properties of Ge : MMMn granular system
dc.contributor.authorLi, H.
dc.contributor.authorWu, Y.
dc.contributor.authorLiu, T.
dc.contributor.authorWang, S.
dc.contributor.authorGuo, Z.
dc.contributor.authorOsipowicz, T.
dc.date.accessioned2014-10-07T04:31:45Z
dc.date.available2014-10-07T04:31:45Z
dc.date.issued2006-05-18
dc.identifier.citationLi, H., Wu, Y., Liu, T., Wang, S., Guo, Z., Osipowicz, T. (2006-05-18). Magnetic and transport properties of Ge : MMMn granular system. Thin Solid Films 505 (1-2) : 54-56. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2005.10.038
dc.identifier.issn00406090
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82639
dc.description.abstractGe : Mn granular thin films were fabricated on semi-insulating GaAs(001) substrates by molecular beam epitaxy. Transmission electron microscopy and Raman study showed that the sample has a granular structure consisting of GeMn crystallites in a Ge polycrystalline host matrix. A Curie temperature of ∼ 300 K was observed in the magnetization measurement, suggesting that the granules are Mn5Ge3. The granular nature of the material was also revealed clearly in the differential conductance vs. bias voltage curves. The unique conductance versus bias voltage curve suggests that the electrical transport is determined by Schottky barriers at the nanoparticle/host matrix interface. This type of material might be useful for studying spin-injections from metallic magnetic nanostructures to semiconductors. © 2005 Elsevier B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.tsf.2005.10.038
dc.sourceScopus
dc.subjectDiluted magnetic semiconductors (DMSs)
dc.subjectGranular systems
dc.subjectLocalization
dc.subjectSchottky barrier
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.contributor.departmentNUS NANOSCIENCE & NANOTECH INITIATIVE
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1016/j.tsf.2005.10.038
dc.description.sourcetitleThin Solid Films
dc.description.volume505
dc.description.issue1-2
dc.description.page54-56
dc.description.codenTHSFA
dc.identifier.isiut000236440600011
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