Please use this identifier to cite or link to this item: https://doi.org/10.1109/LPT.2008.928087
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dc.titleLow-voltage high-speed (18 GHz/1 V) evanescent-coupled thin-film-Ge lateral PIN photodetectors integrated on Si waveguide
dc.contributor.authorWang, J.
dc.contributor.authorLoh, W.Y.
dc.contributor.authorChua, K.T.
dc.contributor.authorZang, H.
dc.contributor.authorXiong, Y.Z.
dc.contributor.authorTan, S.M.F.
dc.contributor.authorYu, M.B.
dc.contributor.authorLee, S.J.
dc.contributor.authorLo, G.Q.
dc.contributor.authorKwong, D.L.
dc.date.accessioned2014-10-07T04:31:41Z
dc.date.available2014-10-07T04:31:41Z
dc.date.issued2008-09
dc.identifier.citationWang, J., Loh, W.Y., Chua, K.T., Zang, H., Xiong, Y.Z., Tan, S.M.F., Yu, M.B., Lee, S.J., Lo, G.Q., Kwong, D.L. (2008-09). Low-voltage high-speed (18 GHz/1 V) evanescent-coupled thin-film-Ge lateral PIN photodetectors integrated on Si waveguide. IEEE Photonics Technology Letters 20 (17) : 1485-1487. ScholarBank@NUS Repository. https://doi.org/10.1109/LPT.2008.928087
dc.identifier.issn10411135
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82633
dc.description.abstractThis letter presents the device performance of scaled thin-film-Ge lateral PIN photodetectors integrated on a Si waveguide. The photodetectors are with closely spaced pn regions (0.8 μm) on a Ge region with short length (5-20 μm) and narrow width (2.4 μm). Though with a thin Ge layer (∼220 nm including bottom SiGe buffer), light is evanescent-coupled from the Si waveguide effectively to the overlying Ge detector. The device exhibits f3 db bandwidth of 18 GHz with external responsivity of 0.13 A/W for 1550 nm at -1 V. Considering the coupling loss and waveguide loss, the internal responsivity is as high as 0.65 A/W. It is shown that with increasing detector length, the devices' internal quantum efficiency can be improved to ∼90% and by suppressing parasitic effects, speed can be boosted further towards several tens of gigahertz. © 2008 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LPT.2008.928087
dc.sourceScopus
dc.subjectEvanescent-coupled
dc.subjectLateral p-i-n
dc.subjectPhotodetector
dc.subjectWaveguide
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentPHYSICS
dc.description.doi10.1109/LPT.2008.928087
dc.description.sourcetitleIEEE Photonics Technology Letters
dc.description.volume20
dc.description.issue17
dc.description.page1485-1487
dc.description.codenIPTLE
dc.identifier.isiut000260119600017
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