Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2004.05.028
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dc.titleInvestigation of electrical properties of furnace grown gate oxide on strained-Si
dc.contributor.authorBera, L.K.
dc.contributor.authorMathew, S.
dc.contributor.authorBalasubramanian, N.
dc.contributor.authorLeitz, C.
dc.contributor.authorBraithwaite, G.
dc.contributor.authorSingaporewala, F.
dc.contributor.authorYap, J.
dc.contributor.authorCarlin, J.
dc.contributor.authorLangdo, T.
dc.contributor.authorLochtefeld, T.
dc.contributor.authorCurrie, M.
dc.contributor.authorHammond, R.
dc.contributor.authorFiorenza, J.
dc.contributor.authorBadawi, H.
dc.contributor.authorBulsara, M.
dc.date.accessioned2014-10-07T04:30:55Z
dc.date.available2014-10-07T04:30:55Z
dc.date.issued2004-09
dc.identifier.citationBera, L.K., Mathew, S., Balasubramanian, N., Leitz, C., Braithwaite, G., Singaporewala, F., Yap, J., Carlin, J., Langdo, T., Lochtefeld, T., Currie, M., Hammond, R., Fiorenza, J., Badawi, H., Bulsara, M. (2004-09). Investigation of electrical properties of furnace grown gate oxide on strained-Si. Thin Solid Films 462-463 (SPEC. ISS.) : 85-89. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2004.05.028
dc.identifier.issn00406090
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82569
dc.description.abstractEffect of strained-Si thickness on electrical properties of furnace grown gate oxide has been investigated. Interface state density (Dit) versus energy characteristics shows that Dit increases with decreasing strained-Si thickness, probably due to the presence of Ge at the interface. From conductance measurement, two different types of traps are observed in the gate oxide. In thinner strained-Si samples, the onset of F-N tunneling happens at higher voltages, indicating thicker gate oxide. Gate voltage oscillations were observed during constant current stress under gate injection at low stress current. This sinusoidal characteristics are possibly due to the trapping and detrapping of charges in the oxide. © 2004 Esevier B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.tsf.2004.05.028
dc.sourceScopus
dc.subjectGate oxide
dc.subjectGe-diffusion
dc.subjectSiGe
dc.subjectStrained-Si
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1016/j.tsf.2004.05.028
dc.description.sourcetitleThin Solid Films
dc.description.volume462-463
dc.description.issueSPEC. ISS.
dc.description.page85-89
dc.description.codenTHSFA
dc.identifier.isiut000223812800019
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