Please use this identifier to cite or link to this item: https://doi.org/10.1002/chem.201203940
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dc.titleIn situ synthesis and nonvolatile rewritable-memory effect of polyaniline-functionalized graphene oxide
dc.contributor.authorZhang, B.
dc.contributor.authorChen, Y.
dc.contributor.authorRen, Y.
dc.contributor.authorXu, L.-Q.
dc.contributor.authorLiu, G.
dc.contributor.authorKang, E.-T.
dc.contributor.authorWang, C.
dc.contributor.authorZhu, C.-X.
dc.contributor.authorNeoh, K.-G.
dc.date.accessioned2014-10-07T04:30:22Z
dc.date.available2014-10-07T04:30:22Z
dc.date.issued2013-05-10
dc.identifier.citationZhang, B., Chen, Y., Ren, Y., Xu, L.-Q., Liu, G., Kang, E.-T., Wang, C., Zhu, C.-X., Neoh, K.-G. (2013-05-10). In situ synthesis and nonvolatile rewritable-memory effect of polyaniline-functionalized graphene oxide. Chemistry - A European Journal 19 (20) : 6265-6273. ScholarBank@NUS Repository. https://doi.org/10.1002/chem.201203940
dc.identifier.issn09476539
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82522
dc.description.abstractA new polyaniline (PANI)-functionalized graphene oxide (GO-PANI) was prepared by using an in situ oxidative graft polymerization of aniline on the surface of GO. Its highest occupied molecular orbital (HOMO), lowest unoccupied molecular orbital (LUMO), ionization potential (IP), and electron affinity (EA) values experimentally estimated by the onset of the redox potentials were -5.33, -3.57, 5.59, and 3.83 eV, respectively. A bistable electrical-switching effect was observed in electronic device with the GO-PANI film sandwiched between the indium tin oxide (ITO) and Al electrodes. This device exhibited two accessible conductivity states, that is, the low-conductivity (OFF) state and the high-conductivity (ON) state, and can be switched to the ON state under a negative electrical sweep, and can also be reset to the initial OFF state by a reverse (positive) electrical sweep. The ON state is nonvolatile and can withstand a constant voltage stress of -1 V for 3 h and 108 read cycles at -1 V under ambient conditions. The nonvolatile nature of the ON state and the ability to write, read, and erase the electrical states, fulfill the functionality of a rewritable memory. An ON/OFF current ratio of more than 104 at -1 V achieved in this memory device is high enough to promise a low misreading rate through the precise control of the ON and OFF states. The mechanism associated with the memory effects was elucidated from molecular simulation results. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1002/chem.201203940
dc.sourceScopus
dc.subjectdensity functional calculations
dc.subjectelectronic structure
dc.subjectgraphene
dc.subjectrewritable-memory effect
dc.subjectsynthetic methods
dc.typeArticle
dc.contributor.departmentCHEMICAL & BIOMOLECULAR ENGINEERING
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1002/chem.201203940
dc.description.sourcetitleChemistry - A European Journal
dc.description.volume19
dc.description.issue20
dc.description.page6265-6273
dc.description.codenCEUJE
dc.identifier.isiut000318365200014
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