Please use this identifier to cite or link to this item:
https://doi.org/10.1109/LED.2008.921393
DC Field | Value | |
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dc.title | In situ surface passivation and CMOS-compatible palladium-germanium contacts for surface-channel gallium arsenide MOSFETs | |
dc.contributor.author | Chin, H.-C. | |
dc.contributor.author | Zhu, M. | |
dc.contributor.author | Tung, C.-H. | |
dc.contributor.author | Samudra, G.S. | |
dc.contributor.author | Yeo, Y.-C. | |
dc.date.accessioned | 2014-10-07T04:30:21Z | |
dc.date.available | 2014-10-07T04:30:21Z | |
dc.date.issued | 2008-06 | |
dc.identifier.citation | Chin, H.-C., Zhu, M., Tung, C.-H., Samudra, G.S., Yeo, Y.-C. (2008-06). In situ surface passivation and CMOS-compatible palladium-germanium contacts for surface-channel gallium arsenide MOSFETs. IEEE Electron Device Letters 29 (6) : 553-556. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.921393 | |
dc.identifier.issn | 07413106 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/82520 | |
dc.description.abstract | In this letter, we report a novel n-channel GaAs MOSFET featuring TaN/ HfAlO/GaAs gate stack with in situ surface passivation (vacuum anneal and silane treatment), alternative gold-free palladium-germanium (PdGe) source and drain (S/D) ohmic contacts, and silicon plus phosphorus coimplanted S/D regions. With the novel in situ surface passivation, excellent capacitance-voltage characteristics with low-frequency dispersion and small stretch-out can be achieved, indicating low interface state density. This surface-channel GaAs device exhibits excellent transistor output characteristics with a high drain current on/ off ratio of 105 and a high peak electron mobility of 1230 cm2/V · s. In addition, gold contamination concerning CMOS technology can be alleviated with the successful integration of low-resistance PdGe ohmic contacts. © 2008 IEEE. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2008.921393 | |
dc.source | Scopus | |
dc.subject | Dielectric films | |
dc.subject | GaAs | |
dc.subject | High-κ | |
dc.subject | High-permittivity | |
dc.subject | III-V compound semiconductors | |
dc.subject | Mobility | |
dc.subject | MOSFET | |
dc.subject | Semiconductor device fabrication | |
dc.subject | Semiconductor devices | |
dc.subject | Surface passivation | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1109/LED.2008.921393 | |
dc.description.sourcetitle | IEEE Electron Device Letters | |
dc.description.volume | 29 | |
dc.description.issue | 6 | |
dc.description.page | 553-556 | |
dc.description.coden | EDLED | |
dc.identifier.isiut | 000256189000006 | |
Appears in Collections: | Staff Publications |
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