Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2008.921393
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dc.titleIn situ surface passivation and CMOS-compatible palladium-germanium contacts for surface-channel gallium arsenide MOSFETs
dc.contributor.authorChin, H.-C.
dc.contributor.authorZhu, M.
dc.contributor.authorTung, C.-H.
dc.contributor.authorSamudra, G.S.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:30:21Z
dc.date.available2014-10-07T04:30:21Z
dc.date.issued2008-06
dc.identifier.citationChin, H.-C., Zhu, M., Tung, C.-H., Samudra, G.S., Yeo, Y.-C. (2008-06). In situ surface passivation and CMOS-compatible palladium-germanium contacts for surface-channel gallium arsenide MOSFETs. IEEE Electron Device Letters 29 (6) : 553-556. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.921393
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82520
dc.description.abstractIn this letter, we report a novel n-channel GaAs MOSFET featuring TaN/ HfAlO/GaAs gate stack with in situ surface passivation (vacuum anneal and silane treatment), alternative gold-free palladium-germanium (PdGe) source and drain (S/D) ohmic contacts, and silicon plus phosphorus coimplanted S/D regions. With the novel in situ surface passivation, excellent capacitance-voltage characteristics with low-frequency dispersion and small stretch-out can be achieved, indicating low interface state density. This surface-channel GaAs device exhibits excellent transistor output characteristics with a high drain current on/ off ratio of 105 and a high peak electron mobility of 1230 cm2/V · s. In addition, gold contamination concerning CMOS technology can be alleviated with the successful integration of low-resistance PdGe ohmic contacts. © 2008 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2008.921393
dc.sourceScopus
dc.subjectDielectric films
dc.subjectGaAs
dc.subjectHigh-κ
dc.subjectHigh-permittivity
dc.subjectIII-V compound semiconductors
dc.subjectMobility
dc.subjectMOSFET
dc.subjectSemiconductor device fabrication
dc.subjectSemiconductor devices
dc.subjectSurface passivation
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2008.921393
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume29
dc.description.issue6
dc.description.page553-556
dc.description.codenEDLED
dc.identifier.isiut000256189000006
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