Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2006.11.011
DC FieldValue
dc.titleImpurity free vacancy disordering of InAs/GaAs quantum dot and InAs/InGaAs dot-in-a-well structures
dc.contributor.authorChia, C.K.
dc.contributor.authorChua, S.J.
dc.contributor.authorWang, Y.J.
dc.contributor.authorYong, A.M.
dc.contributor.authorChow, S.Y.
dc.date.accessioned2014-10-07T04:30:19Z
dc.date.available2014-10-07T04:30:19Z
dc.date.issued2007-02-26
dc.identifier.citationChia, C.K., Chua, S.J., Wang, Y.J., Yong, A.M., Chow, S.Y. (2007-02-26). Impurity free vacancy disordering of InAs/GaAs quantum dot and InAs/InGaAs dot-in-a-well structures. Thin Solid Films 515 (7-8) : 3927-3931. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2006.11.011
dc.identifier.issn00406090
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82517
dc.description.abstractTwo types of InAs quantum dot (QD) structure, grown by molecular-beam epitaxy on GaAs (100) substrates, one with dot-in-a-In0.12Ga0.88As quantum well (QW) and another one with dots embedded in a GaAs matrix, were intermixed by impurity free vacancy disordering method using SiO2 dielectric capping and rapid thermal annealing (RTA). The material and optical qualities of these structures were examined and compared by transmission electron microscopy (TEM) and low-temperature 5 K photoluminescence (PL) measurements. For both structures, significant blueshift of the PL spectra with increasing RTA temperature is observed. A maximum blueshift of up to 325 nm is observed from the InAs/InGaAs structure at a RTA temperature of 900 °C. Deduced from the reduction in dot height/diameter aspect ratio by TEM study and the reduction in PL peak separation for ground and excited states, it appears that QDs in dot-in-a-GaAs structure dissolved in a faster rate with increasing RTA temperature, attributed to the higher strain-induced interdiffusion in the InAs/GaAs structure. As opposed to InAs/GaAs QDs, InAs/InGaAs dots-in-a-well retained their optical quality and structural sharpness even after transforming into a QW at high annealing temperature, thus making this structure better candidate for monolithic photonic integration. © 2006 Elsevier B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.tsf.2006.11.011
dc.sourceScopus
dc.subjectImpurity free vacancy disordering
dc.subjectIntermixing
dc.subjectMolecular-beam epitaxy
dc.subjectOptical properties
dc.subjectPhotonic integration
dc.subjectQuantum dots
dc.subjectRapid thermal annealing
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1016/j.tsf.2006.11.011
dc.description.sourcetitleThin Solid Films
dc.description.volume515
dc.description.issue7-8
dc.description.page3927-3931
dc.description.codenTHSFA
dc.identifier.isiut000244825100102
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

6
checked on Sep 18, 2019

WEB OF SCIENCETM
Citations

6
checked on Sep 18, 2019

Page view(s)

61
checked on Sep 8, 2019

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.