Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.1618071
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dc.titleImprovement of Electrical Properties of MOCVD HfO2 by Multistep Deposition
dc.contributor.authorYeo, C.C.
dc.contributor.authorCho, B.J.
dc.contributor.authorJoo, M.S.
dc.contributor.authorWhoang, S.J.
dc.contributor.authorKwong, D.L.
dc.contributor.authorBera, L.K.
dc.contributor.authorMathew, S.
dc.contributor.authorBalasubramanian, N.
dc.date.accessioned2014-10-07T04:30:13Z
dc.date.available2014-10-07T04:30:13Z
dc.date.issued2003-11
dc.identifier.citationYeo, C.C., Cho, B.J., Joo, M.S., Whoang, S.J., Kwong, D.L., Bera, L.K., Mathew, S., Balasubramanian, N. (2003-11). Improvement of Electrical Properties of MOCVD HfO2 by Multistep Deposition. Electrochemical and Solid-State Letters 6 (11) : F42-F44. ScholarBank@NUS Repository. https://doi.org/10.1149/1.1618071
dc.identifier.issn10990062
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82508
dc.description.abstractA multistep metallorganic chemical vapor deposition (MOCVD) technique of HfO2 gate dielectric and its electrical properties are reported. This technique involves steps of "deposition followed by postdeposition annealing" of HfO2 in which each step is repeated on the previously deposited and annealed HfO2. Our experiment demonstrates significant reduction of gate leakage current after high-temperature annealing for HfO2 deposited using a multistep deposition technique as compared to conventional single-step deposition. This improvement is attributed to offset of the grain boundaries and pinholes from one layer to another in a multistep deposited HfO2 which eventually leads to blockage of leakage current path. © 2003 The Electrochemical Society. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1149/1.1618071
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1149/1.1618071
dc.description.sourcetitleElectrochemical and Solid-State Letters
dc.description.volume6
dc.description.issue11
dc.description.pageF42-F44
dc.description.codenESLEF
dc.identifier.isiut000185705200016
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