Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.1455824
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dc.titleImpacts of buffer oxide layer in nitride/oxide stack gate dielectrics on the device performance and dielectric reliability
dc.contributor.authorLin, W.H.
dc.contributor.authorPey, K.L.
dc.contributor.authorDong, Z.
dc.contributor.authorLim, V.S.K.
dc.contributor.authorChooi, S.Y.M.
dc.contributor.authorZhou, M.S.
dc.contributor.authorAng, C.H.
dc.contributor.authorAng, T.C.
dc.contributor.authorLau, W.S.
dc.date.accessioned2014-10-07T04:30:07Z
dc.date.available2014-10-07T04:30:07Z
dc.date.issued2002-04
dc.identifier.citationLin, W.H., Pey, K.L., Dong, Z., Lim, V.S.K., Chooi, S.Y.M., Zhou, M.S., Ang, C.H., Ang, T.C., Lau, W.S. (2002-04). Impacts of buffer oxide layer in nitride/oxide stack gate dielectrics on the device performance and dielectric reliability. Electrochemical and Solid-State Letters 5 (4) : F7-F9. ScholarBank@NUS Repository. https://doi.org/10.1149/1.1455824
dc.identifier.issn10990062
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82500
dc.description.abstractThe device performance and reliability of nitride/oxide stack gate dielectrics with different buffer oxide thickness has been studied. The stack dielectrics were fabricated by in situ H (2%)/O2 anneal of chemical vapor deposited Si3N4. Ellipsometry data indicates the formation of SiO2 at the Si3N4/Si interface. With decreasing thickness of the buffer oxide, the gate leakage current reduced while the reliability and metal oxide semiconductor field effect transistor performance were degraded. The degradation in the reliability is attributed to the extension of structural strained layer into the Si3N4 bulk. Our results suggest that a buffer oxide of ∼10 Å is needed for the implementation of Si3N4 gate dielectric for future high performance complementary metal oxide semiconductor devices.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1149/1.1455824
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1149/1.1455824
dc.description.sourcetitleElectrochemical and Solid-State Letters
dc.description.volume5
dc.description.issue4
dc.description.pageF7-F9
dc.description.codenESLEF
dc.identifier.isiut000175314300013
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