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Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2006.886708
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dc.titleI-MOS transistor with an elevated silicon-germanium impact-ionization region for bandgap engineering
dc.contributor.authorToh, E.-H.
dc.contributor.authorWang, G.H.
dc.contributor.authorChan, L.
dc.contributor.authorLo, G.-Q.
dc.contributor.authorSamudra, G.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:30:03Z
dc.date.available2014-10-07T04:30:03Z
dc.date.issued2006-12
dc.identifier.citationToh, E.-H., Wang, G.H., Chan, L., Lo, G.-Q., Samudra, G., Yeo, Y.-C. (2006-12). I-MOS transistor with an elevated silicon-germanium impact-ionization region for bandgap engineering. IEEE Electron Device Letters 27 (12) : 975-977. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2006.886708
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82494
dc.description.abstractAn impact-ionization MOS (I-MOS) transistor with an elevated impact-ionization region (I-region) and excellent subthreshold swing of 3.2 mV/dec at room temperature is demonstrated. An elevated Si 0.75Ge0.25 region is integrated and employed to engineer the bandgap and impact-ionization rate in the I-region. Compared to a device with a Si I-region, an I-MOS device with a Si0.75Ge0.25 I-region shows significantly enhanced performance due to the smaller bandgap of the I-region and the enhanced impact-ionization rate. For the I-MOS device with a Si0.75 Ge0.25 I-region, the breakdown voltage is also reduced, and a significant drive current enhancement is achieved at VG-VT=1 V and a gate length of 80 nm. © 2006 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2006.886708
dc.sourceScopus
dc.subjectImpact ionization
dc.subjectImpact-ionization MOS (I-MOS)
dc.subjectSilicon-germanium
dc.subjectSubthreshold swing
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2006.886708
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume27
dc.description.issue12
dc.description.page975-977
dc.description.codenEDLED
dc.identifier.isiut000242606000010
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