Please use this identifier to cite or link to this item: https://doi.org/10.1109/55.936352
DC FieldValue
dc.titleHigh quality gate dielectrics grown by rapid thermal processing using split-N 2O technique on strained-Si 0.91Ge 0.09 films
dc.contributor.authorBera, L.K.
dc.contributor.authorChoi, W.K.
dc.contributor.authorTan, C.S.
dc.contributor.authorSamanta, S.K.
dc.contributor.authorMaiti, C.K.
dc.date.accessioned2014-10-07T04:29:35Z
dc.date.available2014-10-07T04:29:35Z
dc.date.issued2001-08
dc.identifier.citationBera, L.K., Choi, W.K., Tan, C.S., Samanta, S.K., Maiti, C.K. (2001-08). High quality gate dielectrics grown by rapid thermal processing using split-N 2O technique on strained-Si 0.91Ge 0.09 films. IEEE Electron Device Letters 22 (8) : 387-389. ScholarBank@NUS Repository. https://doi.org/10.1109/55.936352
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82454
dc.description.abstractThermal stability and strain relaxation temperature of strained Si 0.91Ge 0.09 layer has been investigated using double crystal x-ray diffraction (DCXRD). High quality gate oxynitride layers rapid thermally grown on strained Si 0.91Ge 0.09 using N 2O and split N 2O cycle technique below strained relaxed temperature is reported. A positive fixed oxide charge density was observed for N 2O and split-N 2O grown films. The O 2 grown films exhibit a negative fixed oxide charge. The excellent improvements in the leakage current, breakdown field and charge-to-breakdown value of the N 2O or split-N 2O grown films were achieved compared to pure O 2 grown films.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/55.936352
dc.sourceScopus
dc.subjectGate oxide integrity
dc.subjectOxide reliability
dc.subjectSiGe oxide
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/55.936352
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume22
dc.description.issue8
dc.description.page387-389
dc.description.codenEDLED
dc.identifier.isiut000170050900010
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

6
checked on Jul 15, 2019

WEB OF SCIENCETM
Citations

5
checked on Jul 15, 2019

Page view(s)

61
checked on May 24, 2019

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.