Please use this identifier to cite or link to this item: https://doi.org/10.1149/2.085112jes
DC FieldValue
dc.titleHigh performance metal-insulator-metal capacitors with Er2O 3 on ALD SiO2 for RF applications
dc.contributor.authorPhung, T.H.
dc.contributor.authorSrinivasan, D.K.
dc.contributor.authorSteinmann, P.
dc.contributor.authorWise, R.
dc.contributor.authorYu, M.-B.
dc.contributor.authorYeo, Y.-C.
dc.contributor.authorZhu, C.
dc.date.accessioned2014-10-07T04:29:34Z
dc.date.available2014-10-07T04:29:34Z
dc.date.issued2011
dc.identifier.citationPhung, T.H., Srinivasan, D.K., Steinmann, P., Wise, R., Yu, M.-B., Yeo, Y.-C., Zhu, C. (2011). High performance metal-insulator-metal capacitors with Er2O 3 on ALD SiO2 for RF applications. Journal of the Electrochemical Society 158 (12) : H1289-H1292. ScholarBank@NUS Repository. https://doi.org/10.1149/2.085112jes
dc.identifier.issn00134651
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82452
dc.description.abstractMIM capacitors for RF applications with sputtered Er2O 3 on ALD SiO2 stacked dielectrics with excellent capacitance performance were demonstrated for the first time. An MIM capacitor with 8.8 nm Er2O3 on 3 nm SiO2 stacked dielectrics displayed a high capacitance density of 7 fFm2+, a low quadratic VCC of less than 100 ppmV2+, a low leakage current at 3.3 V bias of 1 10-8 Acm2+, and a high dielectric field strength of 8.7 MVcm. Having leakage currents of 1 10-7 and 4 10 -8 Acm2+ at 3.3 and 2 V, respectively, the MIM capacitor with 7 nm Er2O3 on 3 nm SiO2 stacked dielectrics demonstrated a capacitance density of 7.4 fFm2+ and quadratic VCCs of -91 and -255 ppmV2+ at 10 and 100 kHz, respectively. The low quadratic VCC was obtained by compensating the positive of Er2O3 with the negative of SiO2, while the low leakage current and high oxide field strength demonstrated were due to the high quality SiO2 deposited by the ALD method. © 2011 The Electrochemical Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1149/2.085112jes
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1149/2.085112jes
dc.description.sourcetitleJournal of the Electrochemical Society
dc.description.volume158
dc.description.issue12
dc.description.pageH1289-H1292
dc.description.codenJESOA
dc.identifier.isiut000297979300089
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

21
checked on Jan 26, 2023

WEB OF SCIENCETM
Citations

18
checked on Jan 26, 2023

Page view(s)

123
checked on Jan 26, 2023

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.