Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2006.870273
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dc.titleHafnium aluminum oxide as charge storage and blocking-oxide layers in SONOS-type nonvolatile memory for high-speed operation
dc.contributor.authorTan, Y.N.
dc.contributor.authorChim, W.K.
dc.contributor.authorChoi, W.K.
dc.contributor.authorJoo, M.S.
dc.contributor.authorCho, B.J.
dc.date.accessioned2014-10-07T04:29:27Z
dc.date.available2014-10-07T04:29:27Z
dc.date.issued2006-04
dc.identifier.citationTan, Y.N., Chim, W.K., Choi, W.K., Joo, M.S., Cho, B.J. (2006-04). Hafnium aluminum oxide as charge storage and blocking-oxide layers in SONOS-type nonvolatile memory for high-speed operation. IEEE Transactions on Electron Devices 53 (4) : 654-662. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2006.870273
dc.identifier.issn00189383
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82443
dc.description.abstractThe charge storage and program/erase mechanisms in polysilicon-oxide-nitride-oxide-silicon (SONOS) memory structures with charge-storage layers of different materials are investigated in this paper. In particular, the use of a HfAlO charge-storage layer in a SONOS-type memory structure is proposed. Compared to other high-k charge-storage layers, HfAlO has the advantage of high-speed program/erase of HfO2 as well as the good charge-retention time of of HfO2 as well as the good charge-retention time of Al2O3, which makes HfAlO a promising candidate for the charge-storage layer in a SONOS-type memory. The use of HfAlO with different HfO2 and Al2O3 compositions as a blocking-oxide layer in SONOS-type structures is also investigated. © 2006 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/TED.2006.870273
dc.sourceScopus
dc.subjectFlash memories
dc.subjectHafnium aluminum oxide
dc.subjectHafnium oxide
dc.subjectHigh dielectric constant (high-k)
dc.subjectPolysilicon-oxide-nitride-oxide-silicon (SONOS)
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/TED.2006.870273
dc.description.sourcetitleIEEE Transactions on Electron Devices
dc.description.volume53
dc.description.issue4
dc.description.page654-662
dc.description.codenIETDA
dc.identifier.isiut000236473500010
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