Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3139776
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dc.titleGeTe/Sb7Te3 superlatticelike structure for lateral phase change memory
dc.contributor.authorYang, H.
dc.contributor.authorChong, C.T.
dc.contributor.authorZhao, R.
dc.contributor.authorLee, H.K.
dc.contributor.authorLi, J.
dc.contributor.authorLim, K.G.
dc.contributor.authorShi, L.
dc.date.accessioned2014-10-07T04:29:11Z
dc.date.available2014-10-07T04:29:11Z
dc.date.issued2009
dc.identifier.citationYang, H., Chong, C.T., Zhao, R., Lee, H.K., Li, J., Lim, K.G., Shi, L. (2009). GeTe/Sb7Te3 superlatticelike structure for lateral phase change memory. Applied Physics Letters 94 (20) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3139776
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82419
dc.description.abstractA series of superlatticelike (SLL) structure incorporated with two phase-change materials GeTe and Sb7 Te3 was applied in lateral phase change memory. Power consumption and lifetime were used as two criteria to optimize the SLL structure. It was found that with the thickness ratio of GeTe to Sb 7Te3 at 1.6, the RESET current could be as low as 1.5 mA and the endurance could reach as high as 5.3× 106 cycles. By varying the thickness ratio of GeTe to Sb7Te3, the crystallization temperature of SLL structures and the performance of lateral phase change memory with these SLL structures can be controlled. © 2009 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.3139776
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.3139776
dc.description.sourcetitleApplied Physics Letters
dc.description.volume94
dc.description.issue20
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000266342800064
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