Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2115078
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dc.titleGermanium n+/p junction formation by laser thermal process
dc.contributor.authorHuang, J.
dc.contributor.authorWu, N.
dc.contributor.authorZhang, Q.
dc.contributor.authorZhu, C.
dc.contributor.authorTay, A.A.O.
dc.contributor.authorChen, G.
dc.contributor.authorHong, M.
dc.date.accessioned2014-10-07T04:29:05Z
dc.date.available2014-10-07T04:29:05Z
dc.date.issued2005-10-24
dc.identifier.citationHuang, J., Wu, N., Zhang, Q., Zhu, C., Tay, A.A.O., Chen, G., Hong, M. (2005-10-24). Germanium n+/p junction formation by laser thermal process. Applied Physics Letters 87 (17) : 1-3. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2115078
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82411
dc.description.abstractIn this letter, an n+ p junction on a germanium substrate, formed by phosphorous implantation and subsequent laser thermal annealing process, is demonstrated. The effects of laser energy fluence and irradiation pulse number on the redistribution of dopant atoms have been investigated. The secondary-ion-mass-spectrometry results indicate that steplike dopant profiles are formed with dopant atoms extending deeper upon increased laser energy fluence and successive pulse number. After being irradiated at a laser energy fluence of 0.16 J cm2 with two successive pulses, the junction exhibits a sheet resistance of ∼50 Ohmsq for n+ region, a comparable current-voltage characteristic, and much less phosphorus dopant diffusion in comparison with those formed by rapid thermal process annealing. © 2005 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.2115078
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentNUS NANOSCIENCE & NANOTECH INITIATIVE
dc.contributor.departmentMECHANICAL ENGINEERING
dc.description.doi10.1063/1.2115078
dc.description.sourcetitleApplied Physics Letters
dc.description.volume87
dc.description.issue17
dc.description.page1-3
dc.description.codenAPPLA
dc.identifier.isiut000232723700078
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