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https://doi.org/10.1149/1.3489073
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dc.title | Fluorine incorporation in hfalo gate dielectric for defect passivation and effect on electrical characteristics of In0.53 Ga0.47 As n-MOSFETs | |
dc.contributor.author | Chin, H.-C. | |
dc.contributor.author | Gong, X. | |
dc.contributor.author | Wang, L. | |
dc.contributor.author | Yeo, Y.-C. | |
dc.date.accessioned | 2014-10-07T04:28:34Z | |
dc.date.available | 2014-10-07T04:28:34Z | |
dc.date.issued | 2010 | |
dc.identifier.citation | Chin, H.-C., Gong, X., Wang, L., Yeo, Y.-C. (2010). Fluorine incorporation in hfalo gate dielectric for defect passivation and effect on electrical characteristics of In0.53 Ga0.47 As n-MOSFETs. Electrochemical and Solid-State Letters 13 (12) : H440-H442. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3489073 | |
dc.identifier.issn | 10990062 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/82371 | |
dc.description.abstract | A study of fluorine (F) treatment on the electrical characteristics of In0.53 Ga0.47 As channel n-channel metal-oxide- semiconductor field effect transistors (n-MOSFETs) with metallorganic chemical vapor deposited HfAlO gate dielectric and silane and ammonia (SiH4 + NH3) passivation is reported. X-ray photoelectron spectroscopy and secondary-ion mass spectrometry confirm the incorporation of F in the HfAlO gate dielectric after CF4 plasma treatment. F was segregated near the high-k/InGaAs interface after postdeposition anneal. By introducing F treatment, further improvement in the subthreshold characteristics and hysteresis of the SiH4 + NH3-passivated InGaAs MOSFETs was achieved, indicating a reduction in interface and bulk oxide trapped charges. The F-treated InGaAs MOSFETs demonstrated a significant improvement in drive current and effective carrier mobility, as compared to the control devices. © 2010 The Electrochemical Society. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1149/1.3489073 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1149/1.3489073 | |
dc.description.sourcetitle | Electrochemical and Solid-State Letters | |
dc.description.volume | 13 | |
dc.description.issue | 12 | |
dc.description.page | H440-H442 | |
dc.description.coden | ESLEF | |
dc.identifier.isiut | 000283361600028 | |
Appears in Collections: | Staff Publications |
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