Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2236266
DC FieldValue
dc.titleFerromagnetism and anomalous Hall effect in CoxGe1-x
dc.contributor.authorKo, V.
dc.contributor.authorTeo, K.L.
dc.contributor.authorLiew, T.
dc.contributor.authorChong, T.C.
dc.date.accessioned2014-10-07T04:28:24Z
dc.date.available2014-10-07T04:28:24Z
dc.date.issued2006
dc.identifier.citationKo, V., Teo, K.L., Liew, T., Chong, T.C. (2006). Ferromagnetism and anomalous Hall effect in CoxGe1-x. Applied Physics Letters 89 (4) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2236266
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82357
dc.description.abstractWe report the growth of Co-doped Ge (CoxGe1-x) thin films by low-temperature molecular-beam epitaxy and the ferromagnetic properties without any additional carrier doping. The as-grown Co0.02Ge 0.98 has a Curie temperature, Tc-15 K, while those Co xGe1-x with x≥4.0 at. % are ferromagnetic above room temperature. On the other hand, Co0.02Ge0.98 exhibit ferromagnetic ordering up to Tc-150±10 K after a low-temperature annealing. A redshift in the Raman Ge-Ge mode was observed, indicating the substitution of Ge with Co atoms. The measured Co 0.02Ge0.98 are of p type and exhibit pronounced anomalous Hall effects. © 2006 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.2236266
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.2236266
dc.description.sourcetitleApplied Physics Letters
dc.description.volume89
dc.description.issue4
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000239376500075
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