Please use this identifier to cite or link to this item:
https://doi.org/10.1063/1.2236266
DC Field | Value | |
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dc.title | Ferromagnetism and anomalous Hall effect in CoxGe1-x | |
dc.contributor.author | Ko, V. | |
dc.contributor.author | Teo, K.L. | |
dc.contributor.author | Liew, T. | |
dc.contributor.author | Chong, T.C. | |
dc.date.accessioned | 2014-10-07T04:28:24Z | |
dc.date.available | 2014-10-07T04:28:24Z | |
dc.date.issued | 2006 | |
dc.identifier.citation | Ko, V., Teo, K.L., Liew, T., Chong, T.C. (2006). Ferromagnetism and anomalous Hall effect in CoxGe1-x. Applied Physics Letters 89 (4) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2236266 | |
dc.identifier.issn | 00036951 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/82357 | |
dc.description.abstract | We report the growth of Co-doped Ge (CoxGe1-x) thin films by low-temperature molecular-beam epitaxy and the ferromagnetic properties without any additional carrier doping. The as-grown Co0.02Ge 0.98 has a Curie temperature, Tc-15 K, while those Co xGe1-x with x≥4.0 at. % are ferromagnetic above room temperature. On the other hand, Co0.02Ge0.98 exhibit ferromagnetic ordering up to Tc-150±10 K after a low-temperature annealing. A redshift in the Raman Ge-Ge mode was observed, indicating the substitution of Ge with Co atoms. The measured Co 0.02Ge0.98 are of p type and exhibit pronounced anomalous Hall effects. © 2006 American Institute of Physics. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.2236266 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1063/1.2236266 | |
dc.description.sourcetitle | Applied Physics Letters | |
dc.description.volume | 89 | |
dc.description.issue | 4 | |
dc.description.page | - | |
dc.description.coden | APPLA | |
dc.identifier.isiut | 000239376500075 | |
Appears in Collections: | Staff Publications |
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