Please use this identifier to cite or link to this item:
https://doi.org/10.1016/j.carbon.2009.12.003
DC Field | Value | |
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dc.title | Fabrication of single-walled carbon nanotube Schottky diode with gold contacts modified by asymmetric thiolate molecules | |
dc.contributor.author | Huang, L. | |
dc.contributor.author | Chor, E.F. | |
dc.contributor.author | Wu, Y. | |
dc.contributor.author | Guo, Z. | |
dc.date.accessioned | 2014-10-07T04:28:13Z | |
dc.date.available | 2014-10-07T04:28:13Z | |
dc.date.issued | 2010-04 | |
dc.identifier.citation | Huang, L., Chor, E.F., Wu, Y., Guo, Z. (2010-04). Fabrication of single-walled carbon nanotube Schottky diode with gold contacts modified by asymmetric thiolate molecules. Carbon 48 (4) : 1298-1304. ScholarBank@NUS Repository. https://doi.org/10.1016/j.carbon.2009.12.003 | |
dc.identifier.issn | 00086223 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/82340 | |
dc.description.abstract | We have fabricated single-walled carbon nanotube (SWCNT) Schottky diodes by asymmetrically modifying the two Au/SWCNT contacts using different thiolate molecules, methanethiol (CH3SH) and trifluoroethanethiol (CF3CH2SH). Characterization has revealed that highly asymmetrical contacts with Schottky barrier heights of ∼190 and ∼40 meV (increased by over 70% and decreased by over 60%, respectively with respect to that of pristine Au/SWCNT contact of ∼110 meV) were achieved for the Au/SWCNT contacts modified by CH3SH and CF3CH2SH, respectively. The performance of our SWCNT Schottky diodes is as follows: the forward and reverse current ratio (Iforward/Ireverse) higher than 104, a forward current as high as ∼5 μA, a reverse leakage current as low as ∼100 pA, and a current ideality factor as low as ∼1.42. This is at least comparable to, if not better than SWCNT Schottky diodes fabricated with asymmetrical metals, where one contact is a metal with a work function lower than that of SWCNTs to yield a Schottky contact, while the other has a work function higher than that of SWCNTs to achieve an ohmic (more near ohmic) contact. © 2009 Elsevier Ltd. All rights reserved. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.carbon.2009.12.003 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1016/j.carbon.2009.12.003 | |
dc.description.sourcetitle | Carbon | |
dc.description.volume | 48 | |
dc.description.issue | 4 | |
dc.description.page | 1298-1304 | |
dc.description.coden | CRBNA | |
dc.identifier.isiut | 000274829500042 | |
Appears in Collections: | Staff Publications |
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