Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2008.920277
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dc.titleEvanescent-coupled Ge p-i-n photodetectors on Si-waveguide with SEG-Ge and comparative study of lateral and vertical p-i-n configurations
dc.contributor.authorWang, J.
dc.contributor.authorLoh, W.Y.
dc.contributor.authorChua, K.T.
dc.contributor.authorZang, H.
dc.contributor.authorXiong, Y.Z.
dc.contributor.authorLoh, T.H.
dc.contributor.authorYu, M.B.
dc.contributor.authorLee, S.J.
dc.contributor.authorLo, G.-Q.
dc.contributor.authorKwong, D.-L.
dc.date.accessioned2014-10-07T04:27:47Z
dc.date.available2014-10-07T04:27:47Z
dc.date.issued2008-05
dc.identifier.citationWang, J., Loh, W.Y., Chua, K.T., Zang, H., Xiong, Y.Z., Loh, T.H., Yu, M.B., Lee, S.J., Lo, G.-Q., Kwong, D.-L. (2008-05). Evanescent-coupled Ge p-i-n photodetectors on Si-waveguide with SEG-Ge and comparative study of lateral and vertical p-i-n configurations. IEEE Electron Device Letters 29 (5) : 445-448. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.920277
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82302
dc.description.abstractSi-waveguide-integrated lateral Ge p-i-n photodetectors using novel Si/ SiGe buffer and two-step Ge-process are demonstrated for the first time. Comparative analysis between lateral Ge p-i-n and vertical p-Si/i-Ge/ n-Ge p-i-n is made. Light is evanescently coupled from Si waveguide to the overlaying Ge-detector, achieving high responsivity of 1.16 A/W at 1550 nm with f3db bandwidth of 3.4 GHz for lateral Ge p-i-n detector at 5 V reverse bias. In contrast, vertical p-Si/i-Ge/n-Ge p-i-n has lower responsivity of 0.29 A/W but higher bandwidth of 5.5 GHz at 5 V bias. The higher responsivity of lateral p-i-n detectors is attributed to smaller optical mode overlap with highly doped Ge region as in vertical p-i-n configuration. © 2008 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2008.920277
dc.sourceScopus
dc.subjectEvanescent-coupled
dc.subjectLateral p-i-n
dc.subjectVertical p-i-n
dc.subjectWaveguide Ge-photodetector
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentPHYSICS
dc.description.doi10.1109/LED.2008.920277
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume29
dc.description.issue5
dc.description.page445-448
dc.description.codenEDLED
dc.identifier.isiut000255317400009
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