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Please use this identifier to cite or link to this item: https://doi.org/10.1116/1.2953732
DC FieldValue
dc.titleEtching of TiN-based gates for advanced complementary metal-oxide- semiconductor devices
dc.contributor.authorBliznetsov, V.
dc.contributor.authorSingh, N.
dc.contributor.authorKumar, R.
dc.contributor.authorBalasubramanian, N.
dc.contributor.authorGuo, P.
dc.contributor.authorLee, S.J.
dc.contributor.authorCai, Y.
dc.date.accessioned2014-10-07T04:27:45Z
dc.date.available2014-10-07T04:27:45Z
dc.date.issued2008
dc.identifier.citationBliznetsov, V., Singh, N., Kumar, R., Balasubramanian, N., Guo, P., Lee, S.J., Cai, Y. (2008). Etching of TiN-based gates for advanced complementary metal-oxide- semiconductor devices. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 26 (4) : 1440-1444. ScholarBank@NUS Repository. https://doi.org/10.1116/1.2953732
dc.identifier.issn10711023
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82300
dc.description.abstractThis article presents results of study and optimization of plasma etching of TiN and TiN-TaN gates for sub-45 mm CMOS technology. By design of experiment in decoupled plasma source using HBr/Cl2 plasma, etching parameters were established providing smooth post-etch surface. © 2008 American Vacuum Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1116/1.2953732
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1116/1.2953732
dc.description.sourcetitleJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
dc.description.volume26
dc.description.issue4
dc.description.page1440-1444
dc.description.codenJVTBD
dc.identifier.isiut000258494400033
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