1. ScholarBank@NUS
  2. 1. Staff
  3. Staff Publications
Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.diamond.2014.03.003
DC FieldValue
dc.titleElectrical transport properties of polycrystalline CVD graphene on SiO 2/Si substrate
dc.contributor.authorKumari, A.
dc.contributor.authorPrasad, N.
dc.contributor.authorBhatnagar, P.K.
dc.contributor.authorMathur, P.C.
dc.contributor.authorYadav, A.K.
dc.contributor.authorTomy, C.V.
dc.contributor.authorBhatia, C.S.
dc.date.accessioned2014-10-07T04:27:12Z
dc.date.available2014-10-07T04:27:12Z
dc.date.issued2014-05
dc.identifier.citationKumari, A., Prasad, N., Bhatnagar, P.K., Mathur, P.C., Yadav, A.K., Tomy, C.V., Bhatia, C.S. (2014-05). Electrical transport properties of polycrystalline CVD graphene on SiO 2/Si substrate. Diamond and Related Materials 45 : 28-33. ScholarBank@NUS Repository. https://doi.org/10.1016/j.diamond.2014.03.003
dc.identifier.issn09259635
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82254
dc.description.abstractTransport behavior of single layer graphene (SLG) grown by chemical vapor deposition technique on copper foil and transferred to SiO2/Si substrate has been studied by measuring the dc conductivity and Hall mobility in the temperature range 2-460 K. The samples of size 1 × 1 cm2 have been found to be polycrystalline in nature. Raman spectrum has been studied at various locations of the sample and the formation of SLG has been confirmed. From dc conductivity and mobility measurements it has been concluded that the one dimensional grain boundary defects are mainly responsible for the deterioration of mobility and conductivity of charge carriers in the polycrystalline samples. © 2014 Elsevier B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.diamond.2014.03.003
dc.sourceScopus
dc.subjectChemical vapor deposition
dc.subjectElectrical properties
dc.subjectGrain boundary characterization
dc.subjectGraphene
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1016/j.diamond.2014.03.003
dc.description.sourcetitleDiamond and Related Materials
dc.description.volume45
dc.description.page28-33
dc.description.codenDRMTE
dc.identifier.isiut000336697800005
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.