Please use this identifier to cite or link to this item: https://doi.org/10.1143/JJAP.49.04DJ10
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dc.titleEffect of Ribbon Width and doping concentration on device performance of graphene nanoribbon tunneling field-effect transistors
dc.contributor.authorLam, K.-T.
dc.contributor.authorChin, S.-K.
dc.contributor.authorSeah, D.W.
dc.contributor.authorBala Kumar, S.
dc.contributor.authorLiang, G.
dc.date.accessioned2014-10-07T04:26:38Z
dc.date.available2014-10-07T04:26:38Z
dc.date.issued2010-04
dc.identifier.citationLam, K.-T., Chin, S.-K., Seah, D.W., Bala Kumar, S., Liang, G. (2010-04). Effect of Ribbon Width and doping concentration on device performance of graphene nanoribbon tunneling field-effect transistors. Japanese Journal of Applied Physics 49 (4 PART 2) : -. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.49.04DJ10
dc.identifier.issn00214922
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82207
dc.description.abstractThe device performance of graphene nanoribbon (GNR) tunneling field-effect transistor (TFET) is studied using the self-consistent nonequilibrium Green's function (NEGF) and quasi-two dimensional Poisson solver based on the Dirac equation model. The effects of different GNR widths and doping concentrations at the source and drain on the device characteristics are investigated and the electronic property of the GNR TFET is found to be strongly dependent on its width. A comprehensive characterization of this dependence is expected to be crucial to the designs and fabrications of GNR TFETs. Furthermore, the doping concentrations at the source and drain is found to play a crucial role on the ON- and OFF-state currents (ION and IOFF) respectively. Therefore, the ability to control the doping concentrations allows the tailoring of the drive current, the ION/IOFF ratio and the subthreshold swing of GNR TFETs to meet different design requirements. © 2010 The Japan Society of Applied Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1143/JJAP.49.04DJ10
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1143/JJAP.49.04DJ10
dc.description.sourcetitleJapanese Journal of Applied Physics
dc.description.volume49
dc.description.issue4 PART 2
dc.description.page-
dc.identifier.isiut000277301300170
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