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Title: Effect of Cr-doping on structural and magnetic properties of BeTe
Authors: Ko, V.
Teo, K.L. 
Liew, T. 
Chong, T.C. 
Keywords: Beryllium telluride
Magnetic semiconductor
Issue Date: 18-May-2006
Citation: Ko, V., Teo, K.L., Liew, T., Chong, T.C. (2006-05-18). Effect of Cr-doping on structural and magnetic properties of BeTe. Thin Solid Films 505 (1-2) : 118-121. ScholarBank@NUS Repository.
Abstract: We report the growth of Cr-doped BeTe on GaAs(001) substrate under Te-rich condition by molecular beam epitaxy (MBE). The effects of Cr-doping on the structural and magnetic properties were investigated. Ferromagnetic behavior was observed for growth at substrate temperature of 250 °C with nominal Cr concentration of x > 13.0%. The Curie temperatures, Tc, for x ∼ 13.0% and x ∼ 17.0% were both ∼ 170 K and the RHEED pattern exhibiting (1 × 1) spotty patterns. On the other hand, for x ∼ 27.0%, the Tc obtained was about ∼ 250 K and hexagonal RHEED pattern was observed. The surface becomes less homogeneous with increasing x. This suggests that Cr atoms are unable to be incorporated substitutionally into the host lattices. We attribute the observation of ferromagnetic behavior to the formation of secondary phases. © 2005 Elsevier B.V. All rights reserved.
Source Title: Thin Solid Films
ISSN: 00406090
DOI: 10.1016/j.tsf.2005.10.020
Appears in Collections:Staff Publications

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