Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1374234
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dc.titleDewetting of resist/metal bilayers in resist stripping processes
dc.contributor.authorWu, Y.
dc.contributor.authorQiao, P.
dc.contributor.authorChong, T.
dc.contributor.authorLow, T.-S.
dc.contributor.authorXie, H.
dc.contributor.authorLuo, P.
dc.contributor.authorGuo, Z.
dc.contributor.authorQiu, J.
dc.date.accessioned2014-10-07T04:26:00Z
dc.date.available2014-10-07T04:26:00Z
dc.date.issued2001-05-21
dc.identifier.citationWu, Y., Qiao, P., Chong, T., Low, T.-S., Xie, H., Luo, P., Guo, Z., Qiu, J. (2001-05-21). Dewetting of resist/metal bilayers in resist stripping processes. Applied Physics Letters 78 (21) : 3361-3363. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1374234
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82151
dc.description.abstractWe report the observations of dewetting of resist/metal bilayers in a resist stripping process of nanofabrication in O2 plasma. The initiation of the dewetting process is tentatively associated with local heating caused by surface plasmon induced in metallic nanoparticles or nanowires. The surface patterns thus formed differ substantially from all the dewetting patterns reported so far, and they resemble trees at micrometer scale. The possible mechanism for the formation of this kind striking patterns is discussed and its implication to future nanoelectronics manufacturing is addressed. © 2001 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1374234
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.1374234
dc.description.sourcetitleApplied Physics Letters
dc.description.volume78
dc.description.issue21
dc.description.page3361-3363
dc.description.codenAPPLA
dc.identifier.isiut000168721200067
Appears in Collections:Staff Publications

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