Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3606578
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dc.titleDesign evaluation of graphene nanoribbon nanoelectromechanical devices
dc.contributor.authorLam, K.-T.
dc.contributor.authorStephen Leo, M.
dc.contributor.authorLee, C.
dc.contributor.authorLiang, G.
dc.date.accessioned2014-10-07T04:25:44Z
dc.date.available2014-10-07T04:25:44Z
dc.date.issued2011-07-15
dc.identifier.citationLam, K.-T., Stephen Leo, M., Lee, C., Liang, G. (2011-07-15). Design evaluation of graphene nanoribbon nanoelectromechanical devices. Journal of Applied Physics 110 (2) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3606578
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82129
dc.description.abstractComputational studies on nanoelectromechanical switches based on bilayer graphene nanoribbons (BGNRs) with different designs are presented in this work. By varying the interlayer distance via electrostatic means, the conductance of the BGNR can be changed in order to achieve ON-states and OFF-states, thereby mimicking the function of a switch. Two actuator designs based on the modified capacitive parallel plate (CPP) model and the electrostatic repulsive force (ERF) model are discussed for different applications. Although the CPP design provides a simple electrostatic approach to changing the interlayer distance of the BGNR, their switching gate bias VTH strongly depends on the gate area, which poses a limitation on the size of the device. In addition, there exists a risk of device failure due to static fraction between the mobile and fixed electrodes. In contrast, the ERF design can circumvent both issues with a more complex structure. Finally, optimizations of the devices are carried out in order to provide insights into the design considerations of these nanoelectromechanical switches. © 2011 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.3606578
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.3606578
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume110
dc.description.issue2
dc.description.page-
dc.description.codenJAPIA
dc.identifier.isiut000293476300084
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