Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.jcrysgro.2012.09.015
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dc.titleCrystalline silicon growth in the aluminium-induced glass texturing process
dc.contributor.authorHuang, Y.
dc.contributor.authorLaw, F.
dc.contributor.authorWidenborg, P.I.
dc.contributor.authorAberle, A.G.
dc.date.accessioned2014-10-07T04:25:29Z
dc.date.available2014-10-07T04:25:29Z
dc.date.issued2012-12-15
dc.identifier.citationHuang, Y., Law, F., Widenborg, P.I., Aberle, A.G. (2012-12-15). Crystalline silicon growth in the aluminium-induced glass texturing process. Journal of Crystal Growth 361 (1) : 121-128. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jcrysgro.2012.09.015
dc.identifier.issn00220248
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82108
dc.description.abstractAluminium-induced texturing (AIT) is a method to texture glass surfaces by utilising the reaction between aluminium (Al) and glass at high temperature (above 500 °C) and a subsequent wet-chemical treatment that removes the reaction products. In this work, we studied the solid state reaction between a sputtered Al layer and a borosilicate glass sheet during AIT annealing. Raman spectroscopy showed that crystalline silicon (c-Si) is formed during the AIT process. An optical microscope was used to visualise the evolution of the c-Si growth. Plan-view scanning electron microscopy (SEM) investigations performed on samples after completed AIT reaction showed that separate c-Si clusters formed at the glass surface. Atomic force microscopy revealed that the c-Si clusters grew upwards and were on top of the glass surface. Cross-sectional SEM examination showed that the c-Si layer is not uniform and that crater-shaped nodules are embedded into the glass. The widths and depths of the nodules are in the micrometre range. Energy-dispersive X-ray spectroscopy showed that the nodules consist mainly of aluminium oxide (Al 2O 3). X-ray diffraction analysis showed that the c-Si grains are preferentially (111) oriented. The activation energy of the reaction between Al and borosilicate glass is 3.0±0.2 eV based on in-situ XRD analysis of the c-Si growth. Finally, a phenomenological model of the AIT process is proposed and we suggest that the topology of the glass texture strongly depends on the size, depth and lateral separation of the Al 2O 3 nodules embedded in the glass. © 2012 Elsevier B.V.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.jcrysgro.2012.09.015
dc.sourceScopus
dc.subjectA1. AIT glass texturing method
dc.subjectA1. Aluminium-glass reaction
dc.subjectA1. In-situ X-ray diffraction
dc.subjectA3. Silicon growth
dc.subjectB3. Thin-film solar cells
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentSOLAR ENERGY RESEARCH INST OF S'PORE
dc.description.doi10.1016/j.jcrysgro.2012.09.015
dc.description.sourcetitleJournal of Crystal Growth
dc.description.volume361
dc.description.issue1
dc.description.page121-128
dc.description.codenJCRGA
dc.identifier.isiut000311076000019
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