Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4813882
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dc.titleBand alignment study of lattice-matched InAlP and Ge using x-ray photoelectron spectroscopy
dc.contributor.authorOwen, M.H.S.
dc.contributor.authorGuo, C.
dc.contributor.authorChen, S.-H.
dc.contributor.authorWan, C.-T.
dc.contributor.authorCheng, C.-C.
dc.contributor.authorWu, C.-H.
dc.contributor.authorKo, C.-H.
dc.contributor.authorWann, C.H.
dc.contributor.authorIvana
dc.contributor.authorZhang, Z.
dc.contributor.authorPan, J.S.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:24:12Z
dc.date.available2014-10-07T04:24:12Z
dc.date.issued2013-07-15
dc.identifier.citationOwen, M.H.S., Guo, C., Chen, S.-H., Wan, C.-T., Cheng, C.-C., Wu, C.-H., Ko, C.-H., Wann, C.H., Ivana, Zhang, Z., Pan, J.S., Yeo, Y.-C. (2013-07-15). Band alignment study of lattice-matched InAlP and Ge using x-ray photoelectron spectroscopy. Applied Physics Letters 103 (3) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4813882
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82001
dc.description.abstractLattice-matched In0.48Al0.52P was grown on a p-type Ge(100) substrate by metal-organic chemical vapor deposition, and the band-alignment of In0.48Al0.52P on Ge substrate was obtained by high resolution x-ray photoelectron spectroscopy. The valence band offset for the InAlP/Ge(100) interface was found to be 0.86 eV, with a corresponding conduction band offset of 0.84 eV. From the values obtained, the energy band diagram of InAlP/Ge interface is found to be of type I. © 2013 AIP Publishing LLC.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.4813882
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.4813882
dc.description.sourcetitleApplied Physics Letters
dc.description.volume103
dc.description.issue3
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000322146300022
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