Please use this identifier to cite or link to this item: https://doi.org/10.1002/cvde.200506393
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dc.titleAtomic layer deposited high-κ films and their role in metal-insulator-metal capacitors for Si RF/analog integrated circuit applications
dc.contributor.authorZhu, C.
dc.contributor.authorCho, B.-J.
dc.contributor.authorLi, M.-F.
dc.date.accessioned2014-10-07T04:24:02Z
dc.date.available2014-10-07T04:24:02Z
dc.date.issued2006-03
dc.identifier.citationZhu, C., Cho, B.-J., Li, M.-F. (2006-03). Atomic layer deposited high-κ films and their role in metal-insulator-metal capacitors for Si RF/analog integrated circuit applications. Chemical Vapor Deposition 12 (2-3) : 165-171. ScholarBank@NUS Repository. https://doi.org/10.1002/cvde.200506393
dc.identifier.issn09481907
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/81987
dc.description.abstractIn this paper, we present an extensive evaluation of metal-insulator-metal (MIM) capacitors by comparing various high-κ dielectric structures based on atomic layer deposited HfO2 and A12O3 films at two thicknesses. The results indicate that laminate-structured MIM capacitors provide superior performance to their sandwiched/stacked counterparts in both thin (∼13 nm) and thick (∼55 nm) dielectric films. Benefits include low leakage current, good polarity-independent electrical characteristics, high-breakdown electrical field (voltage), and long time-to-breakdown while maintaining comparable capacitance density and voltage coefficients of capacitance. It is noted, however, that the benefits of the laminate structure become less significant when the dielectric thickness decreases. The advantages of the laminate structure are mainly attributed to the alternate insertions of A12O3 into bulk HfO2, thereby preventing crystallization of HfO2. © 2006 WILEY-VCH Verlag GmbH & Co, KGaA.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1002/cvde.200506393
dc.sourceScopus
dc.subjectALD
dc.subjectHfO2-Al2O3 laminate
dc.subjectHigh-k
dc.subjectMIM capacitor
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1002/cvde.200506393
dc.description.sourcetitleChemical Vapor Deposition
dc.description.volume12
dc.description.issue2-3
dc.description.page165-171
dc.description.codenCVDEF
dc.identifier.isiut000236489900011
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