Please use this identifier to cite or link to this item: https://doi.org/10.1002/adfm.201002436
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dc.titleAn electrically tuned solid-state thermal memory based on metal-insulator transition of single-crystalline VO2 nanobeams
dc.contributor.authorXie, R.
dc.contributor.authorBui, C.T.
dc.contributor.authorVarghese, B.
dc.contributor.authorZhang, Q.
dc.contributor.authorSow, C.H.
dc.contributor.authorLi, B.
dc.contributor.authorThong, J.T.L.
dc.date.accessioned2014-10-07T04:23:35Z
dc.date.available2014-10-07T04:23:35Z
dc.date.issued2011-05-10
dc.identifier.citationXie, R., Bui, C.T., Varghese, B., Zhang, Q., Sow, C.H., Li, B., Thong, J.T.L. (2011-05-10). An electrically tuned solid-state thermal memory based on metal-insulator transition of single-crystalline VO2 nanobeams. Advanced Functional Materials 21 (9) : 1602-1607. ScholarBank@NUS Repository. https://doi.org/10.1002/adfm.201002436
dc.identifier.issn1616301X
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/81949
dc.description.abstractA solid-state thermal memory that can store and retain thermal information with temperature states as input and output is demonstrated experimentally. A single-crystal VO2 nanobeam is used, undergoing a metal-insulator transition at ∼340 K, to obtain a nonlinear and hysteresis response in temperature. It is shown that the application of a voltage bias can substantially tune the characteristics of the thermal memory, to an extent that the heat conduction can be increased ∼60%, and the output HIGH/LOW temperature difference can be amplified over two orders of magnitude compared to an unbiased device. The realization of a solid-state thermal memory combined with an effective electrical control thus allows the development of practical thermal devices for nano- to macroscale thermal management. © 2011 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1002/adfm.201002436
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1002/adfm.201002436
dc.description.sourcetitleAdvanced Functional Materials
dc.description.volume21
dc.description.issue9
dc.description.page1602-1607
dc.description.codenAFMDC
dc.identifier.isiut000290530500008
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