Please use this identifier to cite or link to this item:
https://doi.org/10.1002/adfm.201002436
DC Field | Value | |
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dc.title | An electrically tuned solid-state thermal memory based on metal-insulator transition of single-crystalline VO2 nanobeams | |
dc.contributor.author | Xie, R. | |
dc.contributor.author | Bui, C.T. | |
dc.contributor.author | Varghese, B. | |
dc.contributor.author | Zhang, Q. | |
dc.contributor.author | Sow, C.H. | |
dc.contributor.author | Li, B. | |
dc.contributor.author | Thong, J.T.L. | |
dc.date.accessioned | 2014-10-07T04:23:35Z | |
dc.date.available | 2014-10-07T04:23:35Z | |
dc.date.issued | 2011-05-10 | |
dc.identifier.citation | Xie, R., Bui, C.T., Varghese, B., Zhang, Q., Sow, C.H., Li, B., Thong, J.T.L. (2011-05-10). An electrically tuned solid-state thermal memory based on metal-insulator transition of single-crystalline VO2 nanobeams. Advanced Functional Materials 21 (9) : 1602-1607. ScholarBank@NUS Repository. https://doi.org/10.1002/adfm.201002436 | |
dc.identifier.issn | 1616301X | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/81949 | |
dc.description.abstract | A solid-state thermal memory that can store and retain thermal information with temperature states as input and output is demonstrated experimentally. A single-crystal VO2 nanobeam is used, undergoing a metal-insulator transition at ∼340 K, to obtain a nonlinear and hysteresis response in temperature. It is shown that the application of a voltage bias can substantially tune the characteristics of the thermal memory, to an extent that the heat conduction can be increased ∼60%, and the output HIGH/LOW temperature difference can be amplified over two orders of magnitude compared to an unbiased device. The realization of a solid-state thermal memory combined with an effective electrical control thus allows the development of practical thermal devices for nano- to macroscale thermal management. © 2011 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1002/adfm.201002436 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | PHYSICS | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1002/adfm.201002436 | |
dc.description.sourcetitle | Advanced Functional Materials | |
dc.description.volume | 21 | |
dc.description.issue | 9 | |
dc.description.page | 1602-1607 | |
dc.description.coden | AFMDC | |
dc.identifier.isiut | 000290530500008 | |
Appears in Collections: | Staff Publications |
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